Display module having increased transmittance and electronic device including the display module

ABSTRACT

A display module includes: a display panel having a first area, a second area, and a third area; and a sensor disposed on the display panel, wherein the sensor has a transmissive area, a first sensing area, and a second sensing area, wherein the transmissive area overlaps the first area, wherein the first sensing area overlaps the second area, and the second sensing area overlaps the third area, wherein the sensor includes a plurality of first electrodes and a plurality of second electrodes, and each of the plurality of first electrodes and the plurality of second electrodes has a mesh structure, and wherein the mesh structure includes a first mesh structure and a second mesh structure, wherein the first mesh structure overlaps the first sensing area, wherein the second mesh structure overlaps the second sensing area. The first mesh structure and the second mesh structure are different from each other.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119 to Korean PatentApplication No. 10-2021-0130746 filed on Oct. 01, 2021, in the KoreanIntellectual Property Office, the disclosure of which is incorporated byreference herein in its entirety.

TECHNICAL FIELD

Embodiments of the present inventive concept relate to a display moduleand an electronic device including the same, and more particularly, to adisplay module having increased transmittance, and an electronic deviceincluding the display module.

DISCUSSION OF THE RELATED ART

Generally, an electronic device may include various electroniccomponents such as a display panel, an electronic module, and the like.The electronic module may typically include a camera, an infraredsensor, a proximity sensor, or the like. The electronic module may bedisposed under the display panel. A first portion of the display panelmay have a higher transmittance than a second portion of the displaypanel. The electronic module may receive an external input through thefirst portion of the display panel, or may provide an output through thefirst portion of the display panel.

SUMMARY

According to an embodiment of the present inventive concept, a displaymodule includes: a display panel having a first area, a second area, anda third area, wherein the second area is adjacent to the first area, andthe third area surrounds at least part of the second area; and a sensordisposed on the display panel, wherein the sensor has a transmissivearea, a first sensing area, and a second sensing area, wherein thetransmissive area overlaps the first area, wherein the first sensingarea overlaps the second area, and the second sensing area overlaps thethird area, wherein the sensor includes a plurality of first electrodesand a plurality of second electrodes, and each of the plurality of firstelectrodes and the plurality of second electrodes has a mesh structure,and wherein the mesh structure includes a first mesh structure and asecond mesh structure, wherein the first mesh structure is configured tooverlap the first sensing area, wherein the second mesh structureconfigured to overlap the second sensing area, and wherein the firstmesh structure and the second mesh structure are different from eachother.

In an embodiment of the present inventive concept, the first meshstructure includes a plurality of first mesh lines and a plurality offirst intersection mesh lines configured to intersect the plurality offirst mesh lines, and the second mesh structure includes a plurality ofsecond mesh lines and a plurality of second intersection mesh linesconfigured to intersect the plurality of second mesh lines.

In an embodiment of the present inventive concept, the first meshstructure includes a plurality of first disconnection portions formed inthe plurality of first mesh lines and the plurality of firstintersection mesh lines, and the second mesh structure includes aplurality of second disconnection portions formed in the plurality ofsecond mesh lines and the plurality of second intersection mesh lines,and wherein an arrangement density of the plurality of firstdisconnection portions is lower than an arrangement density of theplurality of second disconnection portions.

In an embodiment of the present inventive concept, the first sensingarea includes a first sub-sensing area adjacent to the transmissive areaand a second sub-sensing area between the first sub-sensing area and thesecond sensing area, and wherein an arrangement density of firstdisconnection portions configured to overlap the first sub-sensing areaamong the plurality of first disconnection portions is lower than anarrangement density of first disconnection portions configured tooverlap the second sub-sensing area among the plurality of firstdisconnection portions.

In an embodiment of the present inventive concept, the first meshstructure further includes a compensation electrode, and thecompensation electrode is disposed in an area corresponding to anopening formed by some first mesh lines among the plurality of firstmesh lines and some first intersection mesh lines among the plurality offirst intersection mesh lines.

In an embodiment of the present inventive concept, the compensationelectrode has a shape corresponding to the opening and is connected tothe some first mesh lines and the some first intersection mesh lines.

In an embodiment of the present inventive concept, the compensationelectrode overlaps a portion of the opening and is connected to at leasta part of the some first mesh lines and the some first intersection meshlines.

In an embodiment of the present inventive concept, the first meshstructure includes a first compensation mesh line disposed between somefirst mesh lines among the plurality of first mesh lines.

In an embodiment of the present inventive concept, the first meshstructure further includes a first compensation intersection mesh linedisposed between some first intersection mesh lines among the pluralityof first intersection mesh lines.

In an embodiment of the present inventive concept, a width of a firstportion of a first mesh line among the plurality of first mesh lines isgreater than a width of a second portion of the first mesh line, and awidth of first portion of a first intersection mesh line among theplurality of first intersection mesh lines is greater than a width ofsecond portion of the first intersection mesh line.

In an embodiment of the present inventive concept, the first meshstructure and the second mesh structure face each other and are includedin one of the plurality of first electrodes or one of the plurality ofsecond electrodes.

In an embodiment of the present inventive concept, the first meshstructure and the second mesh structure face each other, the first meshstructure is included in one of the plurality of first electrodes, andthe second mesh structure is included in one of the plurality of secondelectrodes.

In an embodiment of the present inventive concept, a distance betweenthe plurality of first mesh lines is greater than a distance between theplurality of second mesh lines.

In an embodiment of the present inventive concept, in the second sensingarea, an arrangement density of the plurality of first mesh lines and anarrangement density of the plurality of first intersection mesh linesare gradually lowered as the transmissive area is approached.

In an embodiment of the present inventive concept, a border between thefirst sensing area and the second sensing area has a circular shape.

In an embodiment of the present inventive concept, a border between thefirst sensing area and the second sensing area has a polygonal shape.

In an embodiment of the present inventive concept, the display panelincludes: a first pixel including a first light emitting element and afirst pixel circuit, wherein the first light emitting element isdisposed in the first area, and the first pixel circuit is configured todrive the first light emitting element and is disposed in the secondarea; a second pixel including a second light emitting element and asecond pixel circuit, wherein the second light emitting element isdisposed in the second area, and the second pixel circuit is configuredto drive the second light emitting element and is disposed in the secondarea; and a third pixel including a third light emitting element and athird pixel circuit, wherein the third light emitting element isdisposed in the third area, and the third pixel circuit is configured todrive the third light emitting element and is disposed in the thirdarea.

In an embodiment of the present inventive concept, the first lightemitting element includes a plurality of first light emitting elements,wherein the third light emitting element includes a plurality of thirdlight emitting elements, and wherein a distance between two first lightemitting elements most adjacent to each other among the plurality offirst light emitting elements is greater than a distance between twothird light emitting elements most adjacent to each other among theplurality of third light emitting elements.

According to an embodiment of the present inventive concept, anelectronic device includes: a display panel; a sensor disposed on thedisplay panel, wherein the sensor has a transmissive area, a firstsensing area, and a second sensing area, wherein the first sensing areais adjacent to the transmissive area, and the second sensing area isspaced apart from the transmissive area with the first sensing areadisposed therebetween; and an electronic module disposed on the displaypanel and configured to overlap the transmissive area, wherein thesensor includes: a first mesh structure disposed in the first sensingarea, wherein the first mesh structure includes a plurality of firstmesh lines and a plurality of first intersection mesh lines configuredto intersect the plurality of first mesh lines; and a second meshstructure disposed in the second sensing area, wherein the second meshstructure includes a plurality of second mesh lines and a plurality ofsecond intersection mesh lines configured to intersect the plurality ofsecond mesh lines, and wherein an area of the first mesh structure isdifferent from an area of the second mesh structure.

In an embodiment of the present inventive concept, the first meshstructure includes a plurality of first disconnection portions formed inthe plurality of first mesh lines and the plurality of firstintersection mesh lines, and the second mesh structure includes aplurality of second disconnection portions formed in the plurality ofsecond mesh lines and the plurality of second intersection mesh lines,and wherein an arrangement density of the plurality of firstdisconnection portions is lower than an arrangement density of theplurality of second disconnection portions.

BRIEF DESCRIPTION OF THE FIGURES

The above and other features of the present inventive concept willbecome more apparent by describing in detail embodiments thereof withreference to the accompanying drawings, in which:

FIG. 1 is a perspective view of an electronic device according to anembodiment of the present inventive concept.

FIG. 2 is an exploded perspective view illustrating some components ofthe electronic device according to an embodiment of the presentinventive concept.

FIG. 3 is a sectional view of a display module according to anembodiment of the present inventive concept.

FIG. 4 is a plan view of a display panel according to an embodiment ofthe present inventive concept.

FIG. 5 is an enlarged plan view illustrating area AA’ of FIG. 4 .

FIG. 6A is a sectional view of the display module taken along line I-I'illustrated in FIG. 5 .

FIG. 6B is a sectional view of the display module taken along lineII-II' illustrated in FIG. 5 .

FIG. 7A is a plan view of a sensor according to an embodiment of thepresent inventive concept

FIG. 7B is a sectional view of the sensor taken along line III-III’illustrated in FIG. 7A.

FIG. 7C is a sectional view of the sensor taken along line IV-IV'illustrated in FIG. 7A.

FIG. 7D is an enlarged plan view illustrating area XX’ illustrated inFIG. 7A.

FIG. 7E is a plan view of a sensing unit according to an embodiment ofthe present inventive concept.

FIG. 7F is an enlarged plan view illustrating an intersection area ofthe sensing unit according to an embodiment of the present inventiveconcept.

FIG. 8 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 7A.

FIG. 9 is an enlarged plan view illustrating area BB' of FIG. 8 .

FIG. 10 is an enlarged plan view illustrating area BB’of FIG. 8 .

FIG. 11 is an enlarged plan view illustrating area CC’ of FIG. 8 .

FIG. 12 is an enlarged plan view illustrating area CC’ of FIG. 8 .

FIG. 13 is an enlarged plan view illustrating area CC’ of FIG. 8 .

FIG. 14 is an enlarged plan view illustrating area CC’ of FIG. 8 .

FIG. 15 is an enlarged plan view illustrating area CC’ of FIG. 8 .

FIG. 16 is an enlarged plan view illustrating area CC’ of FIG. 8 .

FIG. 17 is an enlarged plan view illustrating area CC’ of FIG. 8 .

FIG. 18 is an enlarged plan view illustrating area BB’ of FIG. 8 .

FIG. 19A is an enlarged plan view illustrating area BB’ of FIG. 8 .

FIG. 19B is an enlarged plan view illustrating area BB’ of FIG. 8 .

FIG. 20 is an enlarged plan view illustrating area BB’ of FIG. 8 .

FIG. 21 is an enlarged plan view illustrating area BB’ of FIG. 8 .

FIG. 22 is an enlarged plan view illustrating area BB’ of FIG. 8 .

FIG. 23 is a plan view of a sensor according to an embodiment of thepresent inventive concept.

FIG. 24 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 23 .

FIG. 25 is an enlarged plan view illustrating area DD’ of FIG. 23 .

FIG. 26A is an enlarged plan view illustrating area DD’ of FIG. 23

FIG. 26B is an enlarged plan view illustrating area DD’ of FIG. 23 .

FIG. 27 is an enlarged plan view illustrating area DD’ of FIG. 23 .

FIG. 28 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 23 .

FIG. 29 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 23 .

DETAILED DESCRIPTION OF THE EMBODIMENTS

In this specification, it will be understood that when a component (or,an area, a layer, a part, etc.) is referred to as being “on”, “connectedto” or “coupled to” another component, the component may be directly on,connected to, or coupled to the other component or a third component maybe present therebetween.

Identical reference numerals may refer to identical componentsthroughout the specification. Additionally, in the drawings, thethicknesses, proportions, and dimensions of components may beexaggerated for clarity. As used herein, the term “and/or” includes allof one or more combinations of one or more of the associated listeditems.

Terms such as first, second, and the like may be used to describevarious components, but the components should not be limited by theseterms. The terms may be used only for distinguishing one component fromother components. For example, without departing the scope of thepresent inventive concept, a first component may be referred to as asecond component, and similarly, the second component may also bereferred to as the first component. The terms of a singular form mayinclude plural forms unless otherwise specified. As used herein, thesingular forms, “a”, “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise.

In addition, terms such as “below”, “under”, “above”, “over” and thelike, may be used to describe one element’s relation to anotherelement(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, components described as “below” or “beneath”other components or features would then be oriented “above” the othercomponents or features. The terms are relative concepts and may bedescribed based on directions illustrated in the drawing.

Hereinafter, embodiments of the present inventive concept will bedescribed with reference to the accompanying drawings.

FIG. 1 is a perspective view of an electronic device according to anembodiment of the present disclosure.

Referring to FIG. 1 , the electronic device 1000 may be a deviceactivated based on an electrical signal. For example, the electronicdevice 1000 may be, but is not limited to, a mobile phone, a tabletcomputer, a monitor, a television, a car navigation system, a portablegaming device, or a wearable device. In FIG. 1 , the electronic device1000 is illustrated as a mobile phone.

The electronic device 1000 may display an image through a display area1000A. The display area 1000A may include a flat surface parallel to aplane formed by a first direction DR1 and a second direction DR2. Forexample, the display area 1000A may further include curved surfaces bentfrom at least two sides of the flat surface of the display area 1000A.However, the shape of the display area 1000A is not limited thereto. Forexample, the display area 1000A may include only the flat surface, ormay include four curved surfaces bent from at least two sides, forexample, four sides of the flat surface. As another example, the displayarea 1000A may include only one curved surface bent from one side of theflat surface of the display area 1000A.

A sensing area 1000SA may be provided in the display area 1000A of theelectronic device 1000. Although one sensing area 1000SA is illustratedin FIG. 1 , the number of sensing areas 1000SA is not limited theretoThe sensing area 1000SA may be a portion of the display area 1000A.Accordingly, the electronic device 1000 may display an image through thesensing area 1000SA.

An electronic module may be disposed in an area overlapping the sensingarea 1000SA. The electronic module may receive an external inputtransferred through the sensing area 1000SA, or may provide an outputthrough the sensing area 1000SA. For example, the electronic module maybe a camera module, a sensor (e.g., a proximity sensor) that measures adistance, a sensor that recognizes a part of a user’s body (e.g., afingerprint, an iris, or a face), or a small lamp that outputs light,but the present inventive concept is not limited thereto.

The thickness direction of the electronic device 1000 may be parallel toa third direction DR3 crossing the first direction DR1 and the seconddirection DR2. Accordingly, front surfaces (or, e.g., upper surfaces)and rear surfaces (or, e.g., lower surfaces) of members constituting theelectronic device 1000 may be based on the third direction DR3.

FIG. 2 is an exploded perspective view illustrating some components ofthe electronic device according to an embodiment of the presentinventive concept.

Referring to FIG. 2 , the electronic device 1000 may include a displaymodule DM and an electronic module CM. The display module DM maygenerate an image and may sense an input applied from the outside. Theelectronic module CM may be disposed under the display module DM and maybe, for example, a camera module. The display module DM and theelectronic module CM may be referred to as the first electronic moduleand the second electronic module, respectively.

A display area 100A and a peripheral area 100N may be provided in thedisplay module DM. The display area 100A may correspond to the displayarea 1000A illustrated in FIG. 1 . One portion of the display module DMmay have a higher transmittance than another portion thereof and may bea sensing area 100SA. The sensing area 100SA may be a portion of thedisplay area 100A. For example, the sensing area 100SA may display animage and may transmit an external input that is provided to theelectronic module CM and/or an output from the electronic module CM.

FIG. 3 is a sectional view of the display module according to anembodiment of the present inventive concept.

Referring to FIG. 3 , the display module DM may include a display panel100, a sensor 200, and an anti-reflection layer 300.

The display panel 100 may be a component that generates an image. Thedisplay panel 100 may be an emissive display panel. For example, thedisplay panel 100 may be an organic light emitting display panel, aninorganic light emitting display panel, a quantum-dot display panel, amicro LED display panel, or a nano LED display panel. The display panel100 may be referred to as the display layer.

The display panel 100 may include a base layer 110, a circuit layer 120,a light emitting element layer 130, and an encapsulation layer 140.

The base layer 110 may be a layer that provides a base surface on whichthe circuit layer 120 is disposed. The base layer 110 may be a rigidsubstrate or a flexible substrate that can be bent, folded, or rolled.The base layer 110 may be, for example, a glass substrate, a metalsubstrate, or a polymer substrate. However, without being limitedthereto, the base layer 110 may be an inorganic layer, an organic layer,or a composite layer.

The base layer 110 may have a multi-layer structure. For example, thebase layer 110 may include a first synthetic resin layer, anintermediate layer having a multi-layer structure or a single-layerstructure, and a second synthetic resin layer disposed on theintermediate layer. For example, the intermediate layer may be referredto as the base barrier layer. The intermediate layer may include, but isnot limited to, a silicon oxide (SiOx) layer and an amorphous silicon(a-Si) layer disposed on the silicon oxide layer. For example, theintermediate layer may include at least one of a silicon oxide layer, asilicon nitride layer, a silicon oxy-nitride layer, and/or an amorphoussilicon layer.

Each of the first and second synthetic layers may include apolyimide-based resin. In addition, each of the first and secondsynthetic layers may include at least one of an acrylate-based resin, amethacrylate-based resin, a polyisoprene-based resin, a vinyl-basedresin, an epoxy-based resin, a urethane-based resin, a celluose-basedresin, a siloxane-based resin, a polyamide-based resin, and/or aperylene-based resin. In addition, a “~~”-based resin used herein mayrefer to a resin including a “~~” functional group.

The circuit layer 120 may be disposed on the base layer 110. The circuitlayer 120 may include, for example, an insulating layer, a semiconductorpattern, a conductive pattern, and a signal line. The insulating layer,a semiconductor layer, and a conductive layer may be formed on the baselayer 110 by a method such as coating or deposition and may beselectively subjected to patterning by performing a photolithographyprocess a plurality of times. Thereafter, the semiconductor pattern, theconductive pattern, and the signal line included in the circuit layer120 may be formed.

The light emitting element layer 130 may be disposed on the circuitlayer 120. The light emitting element layer 130 may include lightemitting elements. For example, the light emitting element layer 130 mayinclude an organic light emitting material, an inorganic light emittingmaterial, an organic-inorganic light emitting material, a quantum dot, aquantum rod, a micro LED, or a nano LED.

The encapsulation layer 140 may be disposed on the light emittingelement layer 130. The encapsulation layer 140 may protect the lightemitting element layer 130 from foreign matter such as moisture, oxygen,and dust particles. For example, the encapsulation layer 140 may includean organic layer and an inorganic layer stacked on each other.

The sensor 200 may be disposed on the display panel 100. The sensor 200may sense an external input applied from the outside. The external inputmay be an input of the user. The input of the user may include variousforms of external inputs such as a part of the user’s body, light, heat,a pen, or pressure.

The sensor 200 may be formed on the display panel 100 through acontinuous process. For example, the sensor 200 may be directly disposedon the display panel 100. When the sensor 200 is directly disposed onthe display panel 100, a third component might not be disposed betweenthe sensor 200 and the display panel 100. For example, a separateadhesive member might not be disposed between the sensor 200 and thedisplay panel 100. In addition, the sensor 200 may be coupled with thedisplay panel 100 through an adhesive member. The adhesive member mayinclude a conventional adhesive or sticky substance.

The anti-reflection layer 300 may be disposed on the sensor 200. Theanti-reflection layer 300 may decrease the reflectivity of externallight incident from outside the display module DM. The anti-reflectionlayer 300 may be formed on the sensor 200 through a continuous process.The anti-reflection layer 300 may include color filters. The colorfilters may have a predetermined arrangement. For example, the colorfilters may be arranged in consideration of the colors of light emittedby pixels included in the display panel 100. Furthermore, theanti-reflection layer 300 may further include a black matrix adjacent tothe color filters. In an embodiment of the present inventive concept,the anti-reflection layer 300 may be omitted.

FIG. 4 is a plan view of the display panel according to an embodiment ofthe present inventive concept. FIG. 5 is an enlarged plan viewillustrating area AA’ of FIG. 4 .

Referring to FIGS. 4 and 5 , the display panel 100 may include a displayarea DP-A and a peripheral area DP-NA. The peripheral area DP-NA may beadjacent to the display area DP-A and may surround at least part of thedisplay area DP-A.

The display area DP-A may include a first area DP-A1, a second areaDP-A2, and a third area DP-A3. The first area DP-A1 may be referred toas the component area, the second area DP-A2 may be referred to as theintermediate area or the transition area, and the third area DP-A3 maybe referred to as the main display area or the normal display area. Thefirst area DP-A1 and the second area DP-A2 may be referred to as theauxiliary display area.

The display panel 100 may include a plurality of pixels PX. Theplurality of pixels PX may include a first pixel PX1, a second pixelPX2, and a third pixel PX3. The first pixel PX1 emits light in the firstarea DP-A1. The second pixel PX2 emits light in the second area DP-A2,and the third pixel PX3 emits light in the third area DP-A3.

A plurality of first pixels PX1, a plurality of second pixels PX2, and aplurality of third pixels X3 may be provided. In this case, each of thefirst to third pixels PX1, PX2, and PX3 may include, for example, a redpixel, a green pixel, and a blue pixel and may further include a whitepixel according to an embodiment of the present inventive concept.

The first pixel PX1 may include a first light emitting element LD1 and afirst pixel circuit PC1 that drives the first light emitting elementLD1. The second pixel PX2 may include a second light emitting elementLD2 and a second pixel circuit PC2 that drives the second light emittingelement LD2. The third pixel PX3 may include a third light emittingelement LD3 and a third pixel circuit PC3 that drives the third lightemitting element LD3. The positions of the first pixel PX1, the secondpixel PX2, and the third pixel PX3 in FIG. 4 are illustrated tocorrespond to the positions of the first, second, and third lightemitting elements LD1, LD2, and LD3.

The first area DP-A1 may overlap or correspond to the sensing area1000SA illustrated in FIG. 1 . For example, the first area DP-A1 may beprovided in an area overlapping the electronic module CM (refer to FIG.2 ) on a plane. For example, an external input (e.g., light) may beprovided to the electronic module CM through the first area DP-A1, andan output from the electronic module CM may be emitted to the outsidethrough the first area DP-A1. Although the first area DP-A1 isillustrated in a circular shape in this embodiment, the first area DP-A1may have various shapes, such as a polygonal shape, an oval shape, ashape having at least one curved side, or an irregular shape, and thepresent inventive concept is not limited thereto.

To secure the area of a transmissive area, a smaller number of pixelsmay be provided in the first area DP-A1 than in the third area DP-A3.The area where the first light emitting element LD1 is not disposed inthe first area DP-A1 may be the transmissive area. For example, the areawhere a first pixel electrode of the first light emitting element LD1and a pixel defining pattern surrounding the first pixel electrode arenot disposed in the first area DP-A1 may be the transmissive area.

The number of first pixels PX1 per unit area or the same area in thefirst area DP-A1 may be smaller than the number of third pixels PX3 perunit area or the same area in the third area DP-A3. For example, theresolution of the first area DP-A1 may be equal to about ½, ⅜, ⅓, ¼,2/9, ⅛, ⅑, or 1/16 of the resolution of the third area DP-A3. Forexample, the third area DP-A3 may have a resolution of about 400 ppi ormore, and the first area DP-A1 may have a resolution of about 200 ppi orabout 100 ppi. However, this is illustrative, and the present inventiveconcept is not particularly limited thereto.

The first pixel circuit PC1 of the first pixel PX1 may not be disposedin the first area DP-A1. For example, the first pixel circuit PC1 may bedisposed in the second area DP-A2 or the peripheral area DP-NA. In thiscase, the light transmittance of the first area DP-A1 may be higher thana case where the first pixel circuit PC1 is disposed in the first areaDP-A1.

The first light emitting element LD1 and the first pixel circuit PC1 maybe electrically connected with each other through a connecting line TWL.The connecting line TWL may overlap the transmissive area of the firstarea DP-A1. The connecting line TWL may include a transparent conductiveline. The transparent conductive line may include a transparentconductive material or a light transmissive material. For example, theconnecting line TWL may be formed of a film of transparent conductiveoxide (TCO) such as indium tin oxide (ITO), indium zinc oxide (IZO),indium gallium zinc oxide (IGZO), or indium oxide (In₂O₃).

The second area DP-A2 is adjacent to the first area DP-A1. The secondarea DP-A2 may surround at least part of the first area DP-A1. Thesecond area DP-A2 may have a lower transmittance than that of the firstarea DP-A1. In this embodiment, the second area DP-A2 may be spacedapart from the peripheral area DP-NA. However, without being limitedthereto, the second area DP-A2 may be in contact with the peripheralarea DP-NA.

The first pixel circuit PC1 of the first pixel PX1. the second lightemitting element LD2, and the second pixel circuit PC2 may be disposedin the second area DP-A2. Accordingly, the light transmittance of thesecond area DP-A2 may be lower than that of the light transmittance ofthe first area DP-A1. Furthermore, as the first pixel circuit PC1 of thefirst pixel PX1 is disposed in the second area DP-A2, the number ofsecond pixels PX2 per unit area or the same area in the second areaDP-A2 may be smaller than the number of third pixels PX3 per unit areaor the same area in the third area DP-A3. The resolution of an imagedisplayed on the second area DP-a 2 may be lower than the resolution ofan image displayed on the third area DP-A3.

The third area DP-A3 is adjacent to the second area DP-A2. The thirdarea DP-A3 may be an area having a lower transmittance than that of thefirst area DP-A1. The third light emitting element LD3 and the thirdpixel circuit PC3 may be disposed in the third area DP-A3.

A plurality of first light emitting elements LD1, a plurality of secondlight emitting elements LD2, and a plurality of third light emittingelements LD3 may be provided. The interval between two first lightemitting elements LD1 most adjacent to each other among the first lightemitting elements LD1 may be greater than the interval between two thirdlight emitting elements LD3 most adjacent to each other among the thirdlight emitting elements LD3. Furthermore, the interval between twosecond light emitting elements LD2 most adjacent to each other among thesecond light emitting elements LD2 may be greater than the intervalbetween two third light emitting elements LD3 most adjacent to eachother among the third light emitting elements LD3.

The first, second, and third light emitting elements LD1, LD2, and LD3illustrated in FIG. 5 may respectively correspond to the planer shapesof a first pixel electrode AE1 (refer to FIG. 6B) of the first lightemitting element LD1, a second pixel electrode AE2 (refer to FIG. 6B) ofthe second light emitting element LD2, and a third pixel electrode AE3(refer to FIG. 6A) of the third light emitting element LD3. For example,the area of the first pixel electrode AE1 (refer to FIG. 6B) may begreater than the area of the third pixel electrode AE3 (refer to FIG.6A).

FIG. 6A is a sectional view of the display module taken along line I-I'illustrated in FIG. 5 . FIG. 6B is a sectional view of the displaymodule taken along line II-II' illustrated in FIG. 5 . FIG. 6A is asectional view of a portion of the display panel 100 including the thirdarea DP-A3, and FIG. 6B is a sectional view of a portion of the displaypanel 100 including the first area DP-A1 and the second area DP-A2.

Referring to FIGS. 6A and 6B, the display panel 100 may include aplurality of insulating layers, a semiconductor pattern, a conductivepattern, and a signal line. An insulating layer, a semiconductor layer,and a conductive layer may be formed by a method such as coating ordeposition. Thereafter, the insulating layer, the semiconductor layer,and the conductive layer may be selectively subjected to patterning byphotolithography. The semiconductor pattern, the conductive pattern, andthe signal line included in the circuit layer 120 and the light emittingelement layer 130 may be formed by the above-described method.Thereafter, the encapsulation layer 140 that covers the light emittingelement layer 130 may be formed.

In FIG. 6A, the third light emitting element LD3, a silicon thin filmtransistor S-TFT and an oxide thin film transistor O-TFT of the thirdpixel circuit PC3 (refer to FIG. 5 ) are illustrated. In FIG. 6B, thefirst light emitting element LD1, the first pixel circuit PC1, thesecond light emitting element LD2, and the second pixel circuit PC2 areillustrated.

A buffer layer 120 br may be disposed on the base layer 110. The bufferlayer 120 br may prevent diffusion of metal atoms or impurities from thebase layer 110 to a first semiconductor pattern. Furthermore, the bufferlayer 120 br may allow the first semiconductor pattern to besubstantially uniformly formed, by adjusting the speed at which heat isprovided during a crystallization process for forming the firstsemiconductor pattern.

A first rear metal layer BMLa may be disposed under the silicon thinfilm transistor S-TFT, and a second rear metal layer BMLb may bedisposed under the oxide thin film transistor O-TFT. The first andsecond rear metal layers BMLa and BMLb may be disposed to overlap thefirst to third pixel circuits PC1, PC2, and PC3 to protect the first tothird pixel circuits PC1, PC2, and PC3. The first and second rear metallayers BMLa and BMLb may prevent electric potential due to polarizationof the base layer 110 from affecting the first to third pixel circuitsPC1, PC2, and PC3.

The first rear metal layer BMLa may be disposed to correspond to atleast a portion of a pixel circuit. For example, the first rear metallayer BMLa may overlap at least a portion of the pixel circuit. In anembodiment of the present inventive concept, the first rear metal layerBMLa may be disposed to overlap a drive thin film transistor implementedwith the silicon thin film transistor S-TFT.

The first rear metal layer BMLa may be disposed between the base layer110 and the buffer layer 120 br. In an embodiment of the presentinventive concept, the first rear metal layer BMLa may be disposed onthe base layer 110 in which organic films and inorganic films arealternately stacked. In addition, in an embodiment of the presentinventive concept, the first rear metal layer BMLa may be disposed inthe buffer layer 120 br. In this case, an inorganic barrier layer may bedisposed between the first rear metal layer BMLa and the buffer layer120 br. The first rear metal layer BMLa may be connected with anelectrode or a line and may receive a constant voltage or a signal fromthe electrode or the line. In an embodiment of the present inventiveconcept, the first rear metal layer BMLa may be provided in a formisolated from another electrode or line.

The second rear metal layer BMLb may be disposed to correspond to alower portion of the oxide thin film transistor O-TFT. For example, thesecond rear metal layer BMLb may overlap at least a portion of the oxidethin film transistor O-TFT. The second rear metal layer BMLb may bedisposed between a second insulating layer 20 and a third insulatinglayer 30. The second rear metal layer BMLb may be disposed in the samelayer as a second electrode CE2 of a storage capacitor Cst. The secondrear metal layer BMLb may be connected with a contact electrode BML2-Cand may receive a constant voltage or a signal from the contactelectrode BML2-C. The contact electrode BML2-C may be disposed in thesame layer as a second gate electrode GT2 of the oxide thin filmtransistor O-TFT.

Each of the first rear metal layer BMLa and the second rear metal layerBMLb may include, for example, a reflective metal. For example, each ofthe first rear metal layer BMLa and the second rear metal layer BMLb mayinclude silver (Ag), an alloy containing silver, molybdenum (Mo), analloy containing molybdenum, aluminum (Al), an alloy containingaluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN),copper (Cu), titanium (Ti), and p+ doped amorphous silicon. The firstrear metal layer BMLa and the second rear metal layer BMLb may includethe same material as each other, or may contain different materials fromeach other.

The first semiconductor pattern may be disposed on the buffer layer 120br. The first semiconductor pattern may include a silicon semiconductor.For example, the silicon semiconductor may include amorphous silicon orpolycrystalline silicon. For example, the first semiconductor patternmay include low-temperature poly silicon.

Only a portion of the first semiconductor pattern disposed on the bufferlayer 120 br is illustrated in FIG. 6A, and the first semiconductorpattern may be further disposed in another area. The first semiconductorpattern may be arranged across pixels according to a specific rule. Thefirst semiconductor pattern may have different electrical propertiesdepending on whether the first semiconductor pattern is doped or not.The first semiconductor pattern may include a first area, which has ahigh conductivity, and a second area, which has a low conductivity. Thefirst area may be doped with an N-type dopant or a P-type dopant. AP-type transistor may include a doped area doped with a P-type dopant,and an N-type transistor may include a doped area doped with an N-typedopant. The second area may be an undoped area, or may be an area morelightly doped than the first area.

The first area of the first semiconductor pattern may have a higherconductivity than the second area of the first semiconductor pattern andmay substantially serve as an electrode or a signal line. The secondarea may substantially correspond to an active area (or, e.g., achannel) of a transistor. In other words, a portion of a semiconductorpattern may be an active area of a transistor, and another portion ofthe semiconductor pattern may be a source or a drain of the transistor.Another portion of the semiconductor pattern may be a connectingelectrode or a connecting signal line.

A source area SE1, an active area AC1, and a drain area DE1 of thesilicon thin film transistor S-TFT may be formed from the firstsemiconductor pattern. The source area SE1 and the drain area DE1 mayextend from the active area AC1 in opposite directions on the sectionFor example, the active area AC1 may be between the source area SE1 andthe drain area DE1.

A first insulating layer 10 may be disposed on the buffer layer 120 br.The first insulating layer 10 may commonly overlap the plurality ofpixels PX (refer to FIG. 4 ) and may cover the first semiconductorpattern. The first insulating layer 10 may be, for example, an inorganiclayer and/or an organic layer and may have a single-layer structure or amulti-layer structure. The first insulating layer 10 may include atleast one of aluminum oxide, titanium oxide, silicon oxide, siliconnitride, silicon oxy-nitride, zirconium oxide, or hafnium oxide. In thisembodiment, the first insulating layer 10 may be a single layer ofsilicon oxide. In addition, insulating layers of the circuit layer 120to be described below may be inorganic layers and/or organic layers andmay have a single-layer structure or a multi-layer structure. Theinorganic layers may include at least one of the aforementionedmaterials, but the present inventive concept is not limited thereto.

A gate GT1 of the silicon thin film transistor S-TFT may be disposed onthe first insulating layer 10. The gate GT1 may be a portion of a metalpattern. The gate GT1 may overlap the active area AC1. For example, thegate GT1 may function as a mask in a process of doping the firstsemiconductor pattern. The gate GT1 may include titanium (Ti), silver(Ag), an alloy, which includes silver and molybdenum (Mo), an alloywhich includes molybdenum and aluminum (Al), and/or an alloy, whichincludes aluminum, aluminum nitride (AlN), tungsten (W), tungstennitride (WN), copper (Cu), indium tin oxide (ITO), or indium zinc oxide(IZO), but the present inventive concept is not particularly limitedthereto.

The second insulating layer 20 may be disposed on the first insulatinglayer 10 and may cover the gate GT1. The second insulating layer 20 maybe an inorganic layer and/or an organic layer and may have asingle-layer structure or a multi-layer structure The second insulatinglayer 20 may include at least one of silicon oxide, silicon nitride,and/or silicon oxy-nitride. In this embodiment, the second insulatinglayer 20 may have a multi-layer structure including a silicon oxidelayer and a silicon nitride layer.

The third insulating layer 30 may be disposed on the second insulatinglayer 20. The third insulating layer 30 may have a single-layerstructure or a multi-layer structure. For example, the third insulatinglayer 30 may have a multi-layer structure including a silicon oxidelayer and a silicon nitride layer. The second electrode CE2 of thestorage capacitor Cst may be disposed between the second insulatinglayer 20 and the third insulating layer 30. Furthermore, a firstelectrode CE1 of the storage capacitor Cst may be disposed between thefirst insulating layer 10 and the second insulating layer 20.

A second semiconductor pattern may be disposed on the third insulatinglayer 30. The second semiconductor pattern may include an oxidesemiconductor. The oxide semiconductor may include a plurality of areasdistinguished depending on whether metal oxide is reduced or not. Anarea (hereinafter, referred to as the reduced area) where metal oxide isreduced may have a higher conductivity than that of an area(hereinafter, referred to as the non-reduced area) where metal oxide isnot reduced. The reduced area may substantially serve as a source/drainof a transistor or a signal line. The non-reduced area may substantiallycorrespond to an active area (or, e.g., a semiconductor area or achannel) of the transistor. In other words, a portion of the secondsemiconductor pattern may be an active area of a transistor, and anotherportion of the semiconductor pattern may be a source/drain area of thetransistor. Another portion of the semiconductor pattern may be a signaltransmission area.

A source area SE2, an active area AC2, and a drain area DE2 of the oxidethin film transistor O-TFT may be formed from the second semiconductorpattern. The source area SE2 and the drain area DE2 may extend from theactive area AC2 in opposite directions on the section.

A fourth insulating layer 40 may be disposed on the third insulatinglayer 30. The fourth insulating layer 40 may commonly overlap theplurality of pixels PX (refer to FIG. 4 ) and may cover the secondsemiconductor pattern. The fourth insulating layer 40 may include atleast one of aluminum oxide, titanium oxide, silicon oxide, siliconnitride, silicon oxy-nitride, zirconium oxide, and/or hafnium oxide

The gate GT2 of the oxide thin film transistor O-TFT may be disposed onthe fourth insulating layer 40. The gate GT2 may be a portion of a metalpattern. The gate GT2 may overlap the active area AC2. The gate GT2 mayfunction as a mask in a process of doping the second semiconductorpattern.

A fifth insulating layer 50 may be disposed on the fourth insulatinglayer 40 and may cover the gate GT2. The fifth insulating layer 50 maybe an inorganic layer and/or an organic layer and may have asingle-layer structure or a multi-layer structure.

A first connecting electrode CNE1 may be disposed on the fifthinsulating layer 50. The first connecting electrode CNE1 may beconnected to the drain area DE1 of the silicon thin film transistorS-TFT through a contact hole penetrating the first to fifth insulatinglayers 10, 20, 30, 40, and 50. Although FIG. 6A illustrates an examplethat the first connecting electrode CNE1 is connected to the drain areaDE1 of the silicon thin film transistor S-TFT, the first connectingelectrode CNE1 may be electrically connected to the drain area DE1through a light emission control thin film transistor.

A sixth insulating layer 60 may be disposed on the fifth insulatinglayer 50. A second connecting electrode CNE2 may be disposed on thesixth insulating layer 60. The second connecting electrode CNE2 may beconnected to the first connecting electrode CNE1 through a contact holepenetrating the sixth insulating layer 60. A seventh insulating layer 70may be disposed on the sixth insulating layer 60 and may cover thesecond connecting electrode CNE2. An eighth insulating layer 80 may bedisposed on the seventh insulating layer 70.

Each of the sixth insulating layer 60, the seventh insulating layer 70,and the eighth insulating layer 80 may be an organic layer. For example,each of the sixth insulating layer 60, the seventh insulating layer 70,and the eighth insulating layer 80 may include a general purposepolymer, such as benzocyclobutene (BCB), polyimide, hexamethyldisiloxane(HMDSO), Polymethylmethacrylate (PMMA), or Polystyrene (PS), a polymerderivative having a phenolic group, an acrylate-based polymer, animide-based polymer, an aryl ether-based polymer, an amide-basedpolymer, a fluorine-based polymer, a p-xylene-based polymer, a vynylalcohol-based polymer, or a blend thereof.

The light emitting element layer 130 including the first to third lightemitting elements LD1, LD2, and LD3 may be disposed on the circuit layer120. The first light emitting element LD1 may include the first pixelelectrode AE1, a first emissive layer EL1, and a common electrode CE.The second light emitting element LD2 may include the second pixelelectrode AE2, a second emissive layer EL2, and the common electrode CE.The third light emitting element LD3 may include the third pixelelectrode AE3, a third emissive layer EL3, and the common electrode CE.The common electrode CE may be commonly provided to the pixels PX (referto FIG. 4 ).

The first pixel electrode AE1, the second pixel electrode AE2, and thethird pixel electrode AE3 may be disposed on the eighth insulating layer80. Each of the first pixel electrode AE1, the second pixel electrodeAE2, and the third pixel electrode AE3 may be, for example, atransparent (or, e.g., translucent) electrode or a reflective electrode.In an embodiment of the present inventive concept, each of the firstpixel electrode AE1, the second pixel electrode AE2, and the third pixelelectrode AE3 may include a reflective layer and transparent ortranslucent electrode. The reflective layer may be formed of, forexample, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a compound thereof,and the transparent or translucent electrode layer may be formed on thereflective layer. The transparent or translucent electrode layer mayinclude at least one of indium tin oxide (ITO), indium zinc oxide (IZO),indium gallium zinc oxide (IGZO), or indium oxide (In₂O₃) and/oraluminum-doped zinc oxide (AZO). For example, each of the first pixelelectrode AE1, the second pixel electrode AE2, and the third pixelelectrode AE3 may include ITO/Ag/ITO.

A pixel defining film PDL and a pixel defining pattern PDP may bedisposed on the eighth insulating layer 80. The pixel defining film PDLand the pixel defining pattern PDP may include the same material and maybe formed through the same process. Each of the pixel defining film PDLand the pixel defining pattern PDP may have a property of absorbinglight. For example, each of the pixel defining film PDL and the pixeldefining pattern PDP may be black in color. Each of the pixel definingfilm PDL and the pixel defining pattern PDP may include a black coloringagent. The black coloring agent may include a black dye or a blackpigment. The black coloring agent may include carbon black, metal suchas chromium, or an oxide thereof.

The pixel defining pattern PDP may be disposed in the first area DP-A1.The pixel defining pattern PDP may cover a portion of the first pixelelectrode AE1. For example, the pixel defining pattern PDP may cover theperiphery of the first pixel electrode AE1. The pixel defining patternPDP may have a ring shape when viewed on a plane. As used herein, theexpression “viewed on a plane” may mean that it is viewed in the thirddirection DR3.

The pixel defining film PDL may be disposed in the second area DP-A2 andthe third area DP-A3. The pixel defining film PDL may cover a portion ofeach of the second pixel electrode AE2 and the third pixel electrodeAE3. For example, a first opening PDL-OP1, which exposes a portion ofthe second pixel electrode AE2, and a second opening PDL-OP2, whichexposes a portion of the third pixel electrode AE3, may be formed in thepixel defining film PDL.

The pixel defining pattern PDP may increase the distance between theperiphery of the first pixel electrode AE1 and the common electrode CE,and the pixel defining film PDL may increase the distance between theperiphery of the second pixel electrodes AE2 and the common electrode CEand the distance between the periphery of the third pixel electrode AE3and the common electrode CE. Accordingly, the pixel defining pattern PDPand the pixel defining film PDL may serve to prevent arc at theperipheries of the first, second, and third pixel electrodes AE1, AE2,and AE3.

In the first area DP-A1, the area overlapping the portion where thefirst pixel electrode AE1 and the pixel defining pattern PDP aredisposed may be an element area EA, and the remaining area may be atransmissive area TA.

The first pixel electrode AE1 may be electrically connected with thefirst pixel circuit PC1 disposed in the second area DP-A2. For example,the first pixel electrode AE1 may be electrically connected with thefirst pixel circuit PC1 through the connecting line TWL and a connectingbridge CPN. In this case, the connecting line TWL may overlap thetransmissive area TA. Accordingly, the connecting line TWL may include alight transmissive material.

The connecting line TWL may be disposed between the fifth insulatinglayer 50 and the sixth insulating layer 60, but is not particularlylimited thereto. The connecting bridge CPN may be disposed between thesixth insulating layer 60 and the seventh insulating layer 70. Theconnecting bridge CPN may be connected to the connecting line TWL andthe first pixel circuit PC1.

The first emissive layer EL1 may be disposed on the first pixelelectrode AE1. The second emissive layer EL2 may be disposed on thesecond pixel electrode AE2. The third emissive layer EL3 may be disposedon the third pixel electrode AE3. In this embodiment of the presentinventive concept, each of the first to third emissive layers EL1, EL2,and EL3. may emit at least one of blue light, red light, or green light.

The common electrode CE may be disposed on the first to third emissivelayers EL1, EL2, and EL3. The common electrode CE may have an integratedshape and may be commonly disposed for the plurality of pixels PX (referto FIG. 4 ).

A hole control layer may be disposed between the first to third pixelelectrodes AE1, AE2, and AE3 and the first to third emissive layers EL1,EL2, and EL3. The hole control layer may include a hole transportinglayer and a hole injection layer. An electron control layer may bedisposed between the first to third emissive layers EL1, EL2, and EL3and the common electrode CE. The electron control layer may include anelectron transporting layer and an electron injection layer. Forexample, the hole control layer and the electron control layer may becommonly formed for the plurality of pixels PX (refer to FIG. 4 ) byusing an open mask.

The encapsulation layer 140 may be disposed on the light emittingelement layer 130. The encapsulation layer 140 may include an inorganiclayer 141, an organic layer 142, and an inorganic layer 143 sequentiallystacked on one another. However, layers constituting the encapsulationlayer 140 are not limited thereto.

The inorganic layers 141 and 143 may protect the light emitting elementlayer 130 from moisture and oxygen, and the organic layer 142 mayprotect the light emitting element layer 130 from foreign matter such asdust particles. The inorganic layers 141 and 143 may include, forexample, a silicon nitride layer, a silicon oxy-nitride layer, a siliconoxide layer, a titanium oxide layer, or an aluminum oxide layer. Theorganic layer 142 may include, but is not limited to, an acrylate-basedorganic layer.

The sensor 200 may be disposed on the display panel 100. The sensor 200may be referred to as the sensor layer, the input sensing layer, or theinput sensing panel. The sensor 200 may include a base layer 210, afirst conductive layer 220, a sensing insulation layer 230, and a secondconductive layer 240.

The base layer 210 may be disposed on the display panel 100. Forexample, the base layer 210 may be directly disposed on the displaypanel 100. The base layer 210 may be an inorganic layer including atleast one of silicon nitride, silicon oxy-nitride, and/or silicon oxide.In addition, the base layer 210 may be an organic layer including anepoxy resin, an acrylic resin, or an imide-based resin. The base layer210 may have a single-layer structure, or may have a multi-layerstructure stacked in the third direction DR3.

Each of the first conductive layer 220 and the second conductive layer240 may have a single-layer structure, or may have a multi-layerstructure stacked in the third direction DR3.

The conductive layer having the single-layer structure may include ametal layer or a transparent conductive layer. The metal layer mayinclude molybdenum, silver, titanium, copper, aluminum, or an alloythereof. The transparent conductive layer may include transparentconductive oxide such as indium tin oxide (ITO), indium zinc oxide(IZO), or indium zinc tin oxide (IZTO). In addition, the transparentconductive layer may include a conductive polymer such as PEDOT, a metalnano wire, or graphene.

The conductive layer having the multi-layer structure may include metallayers. The metal layers may have, for example, a three-layer structureof titanium/aluminum/titanium. The conductive layer having themulti-layer structure may include at least one metal layer and at leastone transparent conductive layer.

The sensing insulation layer 230 may be disposed between the firstconductive layer 220 and the second conductive layer 240. The sensinginsulation layer 230 may include an inorganic film. The inorganic filmmay include at least one of aluminum oxide, titanium oxide, siliconoxide, silicon nitride, silicon oxy-nitride, zirconium oxide, and/orhafnium oxide.

In addition, the sensing insulation layer 230 may include an organicfilm. The organic film may include at least one of an acrylate-basedresin, a methacrylate-based resin, a polyisoprene-based resin, avinyl-based resin, an epoxy-based resin, a urethane-based resin, acelluose-based resin, a siloxane-based resin, a polyimide-based resin, apolyamide-based resin, and/or a perylene-based resin.

The sensor 200 may further include a cover layer. The cover layer may bedisposed on the sensing insulation layer 230 and may cover the secondconductive layer 240. The cover layer may decrease or remove aprobability that the second conductive layer 240 will be damaged in asubsequent process. The cover layer may include an inorganic material.For example, the cover layer may include silicon nitride, but is notparticularly limited thereto.

The anti-reflection layer 300 may be disposed on the sensor 200. Theanti-reflection layer 300 may include a dividing layer 310, a firstcolor filter 321, a second color filter 322, a third color filter 323,and a planarization layer 330.

The material of the dividing layer 310 is not particularly limited aslong as it is a material that absorbs light. For example, the dividinglayer 310, which is a layer having a black color, may include a blackcoloring agent in an embodiment of the present inventive concept. Theblack coloring agent may include a black dye or a black pigment. Theblack coloring agent may include carbon black, metal such as chromium,or oxide thereof.

The dividing layer 310 may cover the second conductive layer 240 of thesensor 200. The dividing layer 310 may prevent reflection of externallight by the second conductive layer 240 The dividing layer 310 mayoverlap the second area DP-A2 and the third area DP-A3 and might notoverlap the first area DP-A1. For example, a portion of the dividinglayer 310 that overlaps the first area DP-A1 may be removed.Accordingly, the transmittance in the first area DP-A1 may be furtherincreased.

A plurality of openings 310-OP1 and 310-OP2 may be formed in thedividing layer 310. The first opening 310-OP1 may overlap the secondpixel electrode AE2, and the second opening 310-OP2 may overlap thethird pixel electrode AE3.

The first color filter 321 may be disposed to overlap the first areaDP-A1. The second color filter 322 may be disposed to overlap the secondarea DP-A2, and the third color filter 323 may be disposed to overlapthe third area DP-A3. The first color filter 321 may be disposed tooverlap the first pixel electrode AE1. The second color filter 322 maybe disposed to overlap the second pixel electrode AE2, and the thirdcolor filter 323 may be disposed to overlap the third pixel electrodeAE3.

The first color filter 321 may be spaced apart from the dividing layer310 because the dividing layer 310 does not overlap the first areaDP-A1. For example, the first color filter 321 might not make contactwith the dividing layer 310. The second color filter 322 may cover thefirst opening 310-OP1, and the third color filter 323 may cover thesecond opening 310-OP2. Each of the second color filter 322 and thethird color filter 323 may be disposed on dividing layer 310. Forexample, each of the second color filter 322 and the third color filter323 may make contact with the dividing layer 310. The opening areas ofthe first and second openings 310-OP1 and 310-OP2 of the dividing layer310 may be greater than the opening areas of the first and secondopenings PDL-OP1 and PDL-OP2 of the pixel defining film PDL,respectively.

The planarization layer 330 may cover the dividing layer 310, the firstcolor filter 321, the second color filter 322, and the third colorfilter 323. The planarization layer 330 may include an organic materialand may have a flat upper surface. In an embodiment of the presentinventive concept, the planarization layer 330 may be omitted.

FIG. 7A is a plan view of the sensor according to an embodiment of thepresent inventive concept.

Referring to FIG. 7A, the sensor 200 may include a plurality of firstelectrodes 201 and a plurality of second electrodes 202. The pluralityof second electrodes 202 may cross the plurality of first electrodes201. The sensor 200 may further include a plurality of signal lines 203connected to the plurality of first electrodes 201 and the plurality ofsecond electrodes 202.

Each of the plurality of first electrodes 201 may include first portions211 and second portions 212. The first portions 211 and the secondportions 212 may have an integrated shape and may be disposed on thesame layer. For example, the first portions 211 and the second portions212 may be included in the second conductive layer 240 (refer to FIGS.6A and 6B).

Each of the plurality of second electrodes 202 may include sensingpatterns 221 and bridge patterns 222. Two sensing patterns 221 that areadjacent to each other may be electrically connected with each other bytwo bridge patterns 222. However, the present inventive concept is notparticularly limited thereto. The two bridge patterns 222 may intersecta second portion 212 and may be insulated from the second portion 212.The sensing patterns 221 may be included in the second conductive layer240 (refer to FIGS. 6A and 6B), and the bridge patterns 222 may beincluded in the first conductive layer 220 (refer to FIGS. 6A and 6B).

Each of the plurality of first electrodes 201 and the sensing patterns221 may have a mesh (or, e.g., a lattice or net) structure. The sensor200 may be disposed on the display panel 100. For example, the sensor200 may be directly disposed on the display panel 100 (refer to FIG.6A). In this case, the interval between the sensor 200 and the secondelectrode CE (refer to FIG. 6A) of the display panel 100 (refer to FIG.6A) may be decreased. According to the present inventive concept,because each of the plurality of first electrodes 201 and the sensingpatterns 221 has a mesh structure, base capacitance caused by parasiticcapacitance between the first electrodes 201 and the second electrode CE(refer to FIG. 6A) and base capacitance caused by parasitic capacitancebetween the second electrodes 202 and the second electrode CE (refer toFIG. 6A) may be decreased, as compared with when each of the pluralityof first electrodes 210 and the sensing patterns 221 has an electrodeshape without an opening Accordingly, as each of the plurality of firstelectrodes 201 and the sensing patterns 221 has a mesh structure, thetouch sensitivity of the sensor 200 may be increased. In addition, tofurther decrease parasitic capacitance, some of the mesh linesconstituting the first portions 211 and the sensing patterns 221 may beremoved in the form of a closed curve, and an electrically insulateddummy pattern surrounded by the closed curve may be additionallyprovided.

A transmissive area TPA, a first sensing area S-A1, and a second sensingarea S-A2 may be formed in the sensor 200. Referring to FIGS. 4 and 7A,the transmissive area TPA may overlap the first area DP-A1 of thedisplay panel 100. The first sensing area CS-Al may overlap the secondarea DP-A2 of the display panel 100, and the second sensing area S-A2may overlap the third area DP-A3 of the display panel 100. The pluralityof first electrodes 201 and the plurality of second electrodes 202 mightnot be disposed in the transmissive area TPA. Accordingly, thetransmittance of the transmissive area TPA may be further increased.

FIG. 7B is a sectional view of the sensor taken along line III-III'illustrated in FIG. 7A. FIG. 7C is a sectional view of the sensor takenalong line IV-IV' illustrated in FIG. 7A.

Referring to FIGS. 7A, 7B, and 7C, the bridge patterns 222 may be formedfrom the first conductive layer 220 (refer to FIG. 6A), and the firstportions 211, the second portions 212, and the sensing patterns 221 maybe formed from the second conductive layer 240 (refer to FIG. 6A). Thesensing patterns 221 may be connected with the bridge patterns 222through contact holes CNT-I penetrating the sensing insulation layer230.

The plurality of signal lines 203 may be formed from the secondconductive layer 240 (refer to FIG. 6A). However, the present inventiveconcept is not limited thereto. For example, the plurality of signallines 203 may be formed from the first conductive layer 220 (refer toFIG. 6A) and may be disposed between the base layer 210 and the sensinginsulation layer 230. In addition, the plurality of signal lines 203 mayeach include a plurality of layers. For example, the plurality of signallines 203 may each include a first layer line, which is formed from thefirst conductive layer 220 (refer to FIG. 6A), and a second layer line,which is formed from the second conductive layer 240 (refer to FIG. 6A),and the first layer line and the second layer line may be electricallyconnected with each other. When each of the plurality of signal lines203 includes the plurality of layers, the resistance of the plurality ofsignal lines 203 may be lowered. FIG. 7D is an enlarged plan viewillustrating area XX’ illustrated in FIG. 7A. FIG. 7D is a blowup of thefirst portion 211 in FIG. 7A. The first portion 211 may have a meshstructure. A plurality of openings OP-M may be formed in the firstportion 211. The plurality of openings OP-M may correspond to the secondopenings PDL-OP2 of the pixel defining film PDL (refer to FIG. 6A).

FIG. 7E is a plan view of a sensing unit according to an embodiment ofthe present inventive concept. FIG. 7F is an enlarged plan viewillustrating an intersection area of the sensing unit according to anembodiment of the present inventive concept.

Referring to FIGS. 7A, 7E, and 7F, the sensor 200 may be divided into aplurality of sensing units SU. Each of the sensing units SU may includea corresponding intersection area among intersection areas of the firstelectrodes 201 and the second electrodes 202. The intersection area maybe an area where bridge patterns 222 are disposed.

The sensing unit SU may include one half of a first first portion 211, asecond portion 212, one half of a second first portion 211 opposing thefirst first portion 211 with the second portion 212 therebetween, onehalf of a sensing pattern 221, two bridge patterns 222, and one half ofanother sensing pattern 221.

The two bridge patterns 222 may connect the two sensing patterns 221 toeach other. First to fourth connection areas CNT-A1 to CNT-A4 may beprovided between the two bridge patterns 222 and the two sensingpatterns 221. Four contact holes CNT-I may be formed in each of thefirst to fourth connection areas CNT-A1 to CNT-A4.

FIG. 8 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 7A.

Referring to FIGS. 7A and 8 , two first portions 211 a and two sensingpatterns 221 a adjacent to the transmissive area TPA are illustrated.The two first portions 211 a and the two sensing patterns 221 a may alloverlap the first sensing area S-A1 and the second sensing area S-A2.The two first portions 211 a and the two sensing patterns 221 a mightnot overlap the transmissive area TPA.

The first portions 211 a and the sensing patterns 221 a may each includea first mesh structure and a second mesh structure. The first meshstructure overlaps the first sensing area S-A1, and the second meshstructure overlaps the second sensing area S-A2.

The first portions 211 a and the sensing patterns 221 a may becontinuously disposed in the first sensing area S-A1 and the secondsensing area S-A2 Accordingly, the first mesh structure and the secondmesh structure facing each other at the border between the first sensingarea S-A1 and the second sensing area S-A2 may be included in the sameelectrode. For example, a first mesh structure and a second meshstructure facing each other in the second direction DR2 may all beincluded in the first portions 211 a and may be included in one of thefirst electrodes 201. Furthermore, a first mesh structure and a secondmesh structure facing each other in the first direction DR1 may all beincluded in the sensing patterns 221 a and may be included in one of thesecond electrodes 202.

The first mesh structure and the second mesh structure may differ fromeach other. For example, the areas respectively occupied by the firstmesh structure and the second mesh structure in the same reference areamay differ from each other. Hereinafter, the first mesh structure andthe second mesh structure will be described in detail.

FIG. 9 is an enlarged plan view illustrating area BB’ of FIG. 8 .

Referring to FIGS. 8 and 9 , a first mesh structure MS1, which isdisposed in the first sensing area S-A1, and a second mesh structureMS2, which is disposed in the second sensing area S-A2, are illustrated.

The first mesh structure MS1 may include a plurality of first mesh linesML1 and a plurality of first intersection mesh lines MLC1. The pluralityof first mesh lines ML1 may extend in a first intersection directionDRC1 and may be spaced apart from each other in a second intersectiondirection DRC2, and the plurality of first intersection mesh lines MLC1may extend in the second intersection direction DRC2 and may be spacedapart from each other in the first intersection direction DRC1. Theplurality of first mesh lines ML1 and the plurality of firstintersection mesh lines MLC1 may intersect each other and may have anintegrated shape. The first intersection direction DRC1 and the secondintersection direction DRC2 may cross each other.

The second mesh structure MS2 may include a plurality of second meshlines ML2 and a plurality of second intersection mesh lines MLC2. Theplurality of second mesh lines ML2 may extend in the first intersectiondirection DRC1 and may be spaced apart from each other in the secondintersection direction DRC2, and the plurality of second intersectionmesh lines MLC2 may extend in the second intersection direction DRC2 andmay be spaced apart from each other in the first intersection directionDRC1. The plurality of second mesh lines ML2 and the plurality of secondintersection mesh lines MLC2 may intersect each other and may have anintegrated shape

First disconnection portions CTP1 from which portions of the pluralityof first mesh lines ML1 and the plurality of first intersection meshlines MLC1 are removed may be provided in the first mesh structure MS1,and second disconnection portions CTP2 from which portions of theplurality of second mesh lines ML2 and the plurality of secondintersection mesh lines MLC2 are removed may be provided in the secondmesh structure MS2. In FIG. 9 , first cutting lines CL1 that form thefirst disconnection portions CTP1 and second cutting lines CL2 that formthe second disconnection portions CTP2 are illustrated by dotted lines.Each of the first disconnection portions CTP1 and the seconddisconnection portions CTP2 may be referred to as a gap, a mesh removalportion, or a mesh separation portion.

The arrangement density of the first disconnection portions CTP1 may belower than the arrangement density of the second disconnection portionsCTP2. For example, in areas of the same size, the number of firstdisconnection portions CTP1 may be smaller than the number of seconddisconnection portions CTP2. In FIG. 9 , reference areas UA1 and UA2 areillustrated in the first sensing area S-A1 and the second sensing areaS-A2, respectively. The reference areas UA1 and UA2 may have the sameshape and area. Two first disconnection portions CTP1 may be disposed inthe reference area UA1 of the first sensing area S-Al, and four seconddisconnection portions CTP2 may be disposed in the reference area UA2 ofthe second sensing area S-A2.

The first disconnection portions CTP1 and the second disconnectionportions CTP2 may be provided to decrease the visibility ofdisconnection portions for distinguishing the first electrodes 201(refer to FIG. 7A) and the second electrodes 202. Because the firstelectrodes 201 (refer to FIG. 7A) and the second electrodes 202 (referto FIG. 7A) are not disposed in the transmissive area TPA, adisconnection portion is not provided in the transmissive area TPA. Forexample, the arrangement density of a disconnection portion disposed inthe transmissive area TPA may be “0”. When the arrangement density is“0”, it may mean that a disconnection portion is not disposed in apredetermined area.

In the transmissive area TPA, there may be no reflection visibilitycaused by a disconnection portion. Accordingly, the arrangement densityof the first disconnection portions CTP1 disposed in the first sensingarea S-A1 may have a density between the arrangement density of thesecond disconnection portions CTP2 provided in the second sensing areaS-A2 and the arrangement density of a disconnection portion in thetransmissive area.

The pixels PX (refer to FIG. 4 ) may include a red light emittingelement PXR, a green light emitting element PXG, or a blue lightemitting element PXB depending on the colors of light emitted by thepixels PX. The arrangement density of the red light emitting elementPXR, the green light emitting element PXG, and the blue light emittingelement PXB disposed in the area overlapping the second sensing areaS-A2 may be higher than the arrangement density of the red lightemitting element PXR, the green light emitting element PXG, and the bluelight emitting element PXB disposed in the area overlapping the firstsensing area S-A1.

In the second sensing area S-A2, the second disconnection portions CTP2may be formed according to a predetermined rule. For example, two seconddisconnection portions CTP2 may be formed adjacent to one green lightemitting element PXG among the green light emitting elements PXG thatare arranged in the first direction DR1 and the second direction DR2,and the second disconnection portions CTP2 might not be formed aroundthe green pixel adjacent to the one green light emitting element PXG.

In the first sensing area S-A1, the first disconnection portions CTP1may be formed according to a predetermined rule. For example, two firstdisconnection portions CTP1 may be formed adjacent to all of the greenlight emitting elements PXG disposed in the first sensing area S-A1. Inthis case, the arrangement density of the first disconnection portionsCTP1 may be lower than the arrangement density of the seconddisconnection portions CTP2 because the pitch between the green lightemitting elements PXG disposed in the first sensing area S-A1 is greaterthan the pitch between the green light emitting elements PXG disposed inthe second sensing area S-A2.

The first disconnection portions CTP1 and the second disconnectionportions CTP2 may prevent the border between the first electrode 201 andthe second electrode 202 from being visible and are not limited to theabove-described rules. Furthermore, the arrangement density of the firstdisconnection portions CTP1 has only to be lower than the arrangementdensity of the second disconnection portions CTP2 and is not limited tothe above-described rules.

FIG. 10 is an enlarged plan view illustrating area BB’ of FIG. 8 . Indescribing FIG. 10 , components identical to the components illustratedin FIG. 9 will be assigned with identical reference numerals, anddescriptions thereabout may be omitted to prevent redundantdescriptions.

Referring to FIGS. 8 and 10 , the first sensing area S-A1 may include afirst sub-sensing area SSa and a second sub-sensing area SSb. The firstsub-sensing area SSa may be adjacent to the transmissive area TPA, andthe second sub-sensing area SSb may be between the first sub-sensingarea SSa and the second sensing area S-A2.

The arrangement density of first disconnection portions CTP1 a formed inthe first sub-sensing area SSa may be lower than the arrangement densityof first disconnection portions CTP1 b formed in the second sub-sensingarea SSb. For example, in the first sub-sensing area SSa, two seconddisconnection portions CTP2 may be formed adjacent to one green lightemitting element PXG among green light emitting elements PXG arranged inthe first direction DR1 and the second direction DR2, and the firstdisconnection portions CTP1 a might not be formed around the green pixeladjacent to the one green light emitting element PXG. The arrangementdensity of the first disconnection portions CTP1 a may be lower than thearrangement density of the first disconnection portions CTPlb, but thepresent inventive concept is not limited to the above-described rule.

FIG. 11 is an enlarged plan view illustrating area CC’ of FIG. 8 .

Referring to FIGS. 8 and 11 , a portion of the first sensing area S-A1and a portion of the second sensing area S-A2 are illustrated. The areaof the portion of the first sensing area S-A1 and the area of theportion of the second sensing area S-A2 illustrated in FIG. 11 may bethe same as each other.

A first mesh structure MS1 a may be disposed in the first sensing areaS-A1, and a second mesh structure MS2 may be disposed in the secondsensing area S-A2. The first mesh structure MS1 a may differ from thesecond mesh structure MS2. For example, the area of the first meshstructure MS1 a disposed in the same reference area may be greater thanthe area of the second mesh structure MS2.

For example, the first mesh structure MS1 a may include first mesh linesML1, first intersection mesh lines MLC1, and a compensation electrodeCPE. The first mesh lines ML1, the first intersection mesh lines MLC1,and the compensation electrode CPE may include the same material as eachother and may be simultaneously formed in the same process as eachother. The compensation electrode CPE may be disposed in an areacorresponding to an opening OPM provided by some first mesh lines amongthe first mesh lines ML1 and some first intersection mesh lines amongthe first intersection mesh lines MLC1. The some first mesh lines ML1may be two first mesh lines ML1 most adjacent to each other, and thesome first intersection mesh lines MLC1 may be two first intersectionmesh lines MLC1 most adjacent to each other.

The compensation electrode CPE may have a shape corresponding to theopening OPM and may cover the opening OPM. For example, the compensationelectrode CPE may completely cover the opening OPM. The compensationelectrode CPE may be connected with the some first mesh lines ML1 andthe some first intersection mesh lines MLC1 to have an integrated shape.For example, although the compensation electrode CPE additionallydisposed in the first sensing area S-A1 is distinguished from the firstmesh lines ML1 and the first intersection mesh lines MCL1 by hatching,the compensation electrode CPE may include the same material as thefirst mesh lines ML1 and the first intersection mesh lines MCL1, and theboundary might not be distinguished.

The compensation electrode CPE may be disposed in a dummy area where thered light emitting element PXR (refer to FIG. 9 ), the green lightemitting element PXG (refer to FIG. 9 ), and the blue light emittingelement PXB (refer to FIG. 9 ) are not disposed. For example, thecompensation electrode CPE may be provided in an area overlapping thefirst pixel circuit PC1 (refer to FIG. 5 ) that drives the first lightemitting element LD1 (refer to FIG. 5 ). In addition, the compensationelectrode CPE may be provided in an area overlapping the pixel definingfilm PDL (refer to FIG. 6A) that is located between the red lightemitting element PXR (refer to FIG. 9 ), the green light emittingelement PXG (refer to FIG. 9 ), and the blue light emitting element PXB(refer to FIG. 9 ).

The first sensing area S-A1 is an area adjacent to the transmissive areaTPA. The first electrode 201 (refer to FIG. 7A) and the second electrode202 (refer to FIG. 7A) are not disposed in the transmissive area TPA.Accordingly, the area of the first electrode 201 (refer to FIG. 7A)and/or the second electrode 202 (refer to FIG. 7A) may be decreased bythe transmissive area TPA. For example, the area of the first electrode201 and/or the second electrode 202 adjacent to the transmissive areaTPA may be decreased. According to this embodiment, the area of thefirst mesh structure MS1 a may be increased by deforming the first meshstructure MS1 a differently from the second mesh structure MS2.Accordingly, the area of the portion decreased by the transmissive areaTPA may be supplemented by the first mesh structure MS1 a including thecompensation electrode CPE. Thus, the sensing sensitivity in an areathat overlaps the transmissive area TPA of the sensor 200 (refer to FIG.7A) or is adjacent to the transmissive area TPA may be increased.

Furthermore, the embodiments described with reference to FIGS. 9 and 10may be identically applied to the embodiment described with reference toFIG. 11 . In addition, the embodiments described with reference to FIGS.9 and 10 may be identically applied to embodiments to be describedbelow.

FIG. 12 is an enlarged plan view illustrating area CC' of FIG. 8 .

Referring to FIGS. 8 and 12 , a portion of the first sensing area S-A1and a portion of the second sensing area S-A2 are illustrated. The areaof the portion of the first sensing area S-A1 and the area of theportion of the second sensing area S-A2 illustrated in FIG. 12 may bethe same as each other.

A first mesh structure MS1 b may be disposed in the first sensing areaS-A1, and a second mesh structure MS2 may be disposed in the secondsensing area S-A2. The first mesh structure MSIb may differ from thesecond mesh structure MS2 For example, the area of the first meshstructure MS1 b disposed in the same reference area may be greater thanthe area of the second mesh structure MS2.

For example, the first mesh structure MSIb may include a plurality offirst mesh lines ML1, a plurality of first intersection mesh lines MLC1,and a compensation electrode CPEa. The plurality of first mesh linesML1, the plurality of first intersection mesh lines MLC1, and thecompensation electrode CPEa may include the same material and may besimultaneously formed in the same process. The compensation electrodeCPEa may have a shape overlapping a portion of an opening OPM formed bysome first mesh lines ML1 among the first mesh lines ML1 and some firstintersection mesh lines MLC1 among the first intersection mesh linesMLC1. For example, the compensation electrode CPEa may have a shapeoverlapping a portion of an opening OPM formed by two first mesh linesML1 among the first mesh lines ML1 and some first intersection meshlines MLC1 among the first intersection mesh lines MLC1.

The compensation electrode CPEa may have an annular shape. An openingOPM-1 formed by the compensation electrode CPEa may be smaller than theopening OPM formed by the some first mesh lines ML1 among the first meshlines ML1 and the some first intersection mesh lines MLC1 among thefirst intersection mesh lines MLC1.

The compensation electrode CPEa may be connected with the some firstmesh lines and the some first intersection mesh lines to have anintegrated shape. A first width WT1 of one portion of the first meshline ML1 may differ from a second width WT2 of another portion of thefirst mesh line ML1. The other portion of the first mesh line ML1 may bea portion including one portion of the compensation electrode CPEa. Forexample, the other portion of the first mesh line ML1 may include theone portion of the first mesh line ML1 that has the first width WT1 andthe compensation electrode CPEa. For example, the second width WT2 maycorrespond to the sum of the first width WT1 and the width of thecompensation electrode CPEa, and the second width WT2 may be greaterthan the first width WT1. Furthermore, the widths of a second mesh lineML2 and a second intersection mesh line MLC2 may be substantially thesame as the first width WT1.

The compensation electrode CPEa may be disposed in a dummy area wherethe red light emitting element PXR (refer to FIG. 9 ), the green lightemitting element PXG (refer to FIG. 9 ), and the blue light emittingelement PXB (refer to FIG. 9 ) are not disposed. For example, thecompensation electrode CPEa may be provided in an area overlapping thefirst pixel circuit PC1 (refer to FIG. 5 ) that drives the first lightemitting element LD1 (refer to FIG. 5 ). In addition, the compensationelectrode CPEa may be provided in an area overlapping the pixel definingfilm PDL (refer to FIG. 6A) that is located between the red lightemitting element PXR (refer to FIG. 9 ), the green light emittingelement PXG (refer to FIG. 9 ), and the blue light emitting element PXB(refer to FIG. 9 ).

According to this embodiment, the area of the first mesh structure MSlbmay be increased by deforming the first mesh structure MS1 b differentlyfrom the second mesh structure MS2. Accordingly, the area of the portiondecreased by the transmissive area TPA may be supplemented by the firstmesh structure MS1 b including the compensation electrode CPEa. Thus,the sensing sensitivity in an area that overlaps the transmissive areaTPA of the sensor 200 (refer to FIG. 7A) or is adjacent to thetransmissive area TPA may be increased.

FIG. 13 is an enlarged plan view illustrating area CC’ of FIG. 8 .

Referring to FIGS. 8 and 13 , a portion of the first sensing area S-A1and a portion of the second sensing area S-A2 are illustrated. The areaof the portion of the first sensing area S-A1 and the area of theportion of the second sensing area S-A2 illustrated in FIG. 13 may bethe same as each other.

A first mesh structure MS1 b may be disposed in the first sensing areaS-A1, and a second mesh structure MS2 may be disposed in the secondsensing area S-A2. The first mesh structure MS1 b may differ from thesecond mesh structure MS2. For example, the area of the first meshstructure MS1 b disposed in the same reference area may be greater thanthe area of the second mesh structure MS2.

For example, the first mesh structure MS1 b may include a plurality offirst mesh lines ML1, a plurality of first intersection mesh lines MLC1,and a compensation electrode CPEa. The plurality of first mesh linesML1, the plurality of first intersection mesh lines MLC1, and thecompensation electrode CPEa may include the same material and may besimultaneously formed in the same process.

When compared with the compensation electrode CPEa described withreference to FIG. 12 , the compensation electrode CPEa illustrated inFIG. 13 may be provided to correspond to all openings OPM of the firstsensing area S-A1 where the red light emitting element PXR, the greenlight emitting element PXG, and the blue light emitting element PXB(refer to FIG. 9 ) are not disposed.

The compensation electrode CPEa may be connected with some of the firstmesh lines and some of the first intersection mesh lines to have anintegrated shape. A first width WT1 of a first portion of the first meshline ML1 may differ from each of a second width WT2 of a second portionof the first mesh line ML1 and a third width WT3 of a third portion ofthe first mesh line ML1. The second portion of the first mesh line ML1may be a portion adjacent to one compensation electrode CPEa. The thirdportion of the first mesh line ML1 may be a portion adjacent to twocompensation electrodes CPEa For example, the third portion of the firstmesh line ML1 may be disposed between two adjacent compensationelectrodes CPEa. The second width WT2 may be greater than the firstwidth WT1, and the third width WT3 may be greater than each of the firstwidth WT1 and the second width WT2.

The compensation electrode CPEa may be disposed in a dummy area wherethe red light emitting element PXR (refer to FIG. 9 ), the green lightemitting element PXG (refer to FIG. 9 ), and the blue light emittingelement PXB (refer to FIG. 9 ) are not disposed. For example, thecompensation electrode CPEa may be provided in an area overlapping thefirst pixel circuit PC1 (refer to FIG. 5 ) that drives the first lightemitting element LD1 (refer to FIG. 5 ). In addition, the compensationelectrode CPEa may be provided in an area overlapping the pixel definingfilm PDL (refer to FIG. 6A) that is located between the red lightemitting element PXR (refer to FIG. 9 ), the green light emittingelement PXG (refer to FIG. 9 ), and the blue light emitting element PXB(refer to FIG. 9 ).

According to this embodiment, the area of the first mesh structure MS1 bmay be increased by deforming the first mesh structure MS1 b differentlyfrom the second mesh structure MS2. Accordingly, the area of the portionof the sensor 200 decreased by the transmissive area TPA may besupplemented by the first mesh structure MS1 b including thecompensation electrode CPEa. Thus, the sensing sensitivity in an areathat overlaps the transmissive area TPA of the sensor 200 (refer to FIG.7A) or is adjacent to the transmissive area TPA may be increased.

FIG. 14 is an enlarged plan view illustrating area CC’ of FIG. 8 .

Referring to FIGS. 8 and 14 , a portion of the first sensing area S-A1and a portion of the second sensing area S-A2 are illustrated. A firstmesh structure MS1 c may be disposed in the first sensing area S-A1, anda second mesh structure MS2 may be disposed in the second sensing areaS-A2. The first mesh structure MS1 c may differ from the second meshstructure MS2. For example, the area of the first mesh structure MS1 cdisposed in the same reference area may be greater than the area of thesecond mesh structure MS2.

For example, the first mesh structure MS1 c may include a plurality offirst mesh lines ML1, a plurality of first intersection mesh lines MLC1,and a compensation electrode CPEb. The plurality of first mesh linesML1, the plurality of first intersection mesh lines MLC1, and thecompensation electrode CPEb may include the same material and may besimultaneously formed in the same process. The compensation electrodeCPEb may have a shape overlapping a portion of an opening OPM formed bysome first mesh lines among the first mesh lines ML1 and some firstintersection mesh lines among the first intersection mesh lines MLC1.

The compensation electrode CPEb may be disposed in a dummy area wherethe red light emitting element PXR (refer to FIG. 9 ), the green lightemitting element PXG (refer to FIG. 9 ), and the blue light emittingelement PXB (refer to FIG. 9 ) are not disposed. For example, thecompensation electrode CPEb may be provided in an area overlapping thefirst pixel circuit PC1 (refer to FIG. 5 ) that drives the first lightemitting element LD1 (refer to FIG. 5 ). In addition, the compensationelectrode CPEb may be provided in an area overlapping the pixel definingfilm PDL (refer to FIG. 6A) that is located between the red lightemitting element PXR (refer to FIG. 9 ), the green light emittingelement PXG (refer to FIG. 9 ), and the blue light emitting element PXB(refer to FIG. 9 ).

The compensation electrode CPEb may have a meandering shape orserpentine shape such as a square serpentine shape. The compensationelectrode CPEb may be connected with the some first mesh lines and thesome first intersection mesh lines to have an integrated shape.According to this embodiment, the area of the first mesh structure MS1 cmay be increased by deforming the first mesh structure MS1 c differentlyfrom the second mesh structure MS2. Accordingly, the area of the portionof the sensor 200 decreased by the transmissive area TPA may besupplemented by the first mesh structure MS1 c including thecompensation electrode CPEb. Thus, the sensing sensitivity in an areathat overlaps the transmissive area TPA of the sensor 200 (refer to FIG.7A) or is adjacent to the transmissive area TPA may be increased.

FIG. 15 is an enlarged plan view illustrating area CC’ of FIG. 8 .

Referring to FIGS. 8 and 15 , a portion of the first sensing area S-A1and a portion of the second sensing area S-A2 are illustrated. A firstmesh structure MS1 d may be disposed in the first sensing area S-A1, anda second mesh structure MS2 may be disposed in the second sensing areaS-A2. The first mesh structure MS1 d may differ from the second meshstructure MS2. For example, the area of the first mesh structure MS1 ddisposed in the same reference area may be greater than the area of thesecond mesh structure MS2.

For example, the first mesh structure MS1 d may include a plurality offirst mesh lines ML1, a plurality of first intersection mesh lines MLC1,a first compensation electrode CPEc, and a second compensation electrodeCPEd. The plurality of first mesh lines ML1, the plurality of firstintersection mesh lines MLC1, the first compensation electrode CPEc, andthe second compensation electrode CPEd may include the same material andmay be simultaneously formed in the same process. Each of the firstcompensation electrode CPEc and the second compensation electrode CPEdmay have a shape overlapping a portion of an opening OPM formed by somefirst mesh lines among the first mesh lines ML1 and some firstintersection mesh lines among the first intersection mesh lines MLC1.

The first compensation electrode CPEc and the second compensationelectrode CPEd may have different shapes from each other. For example,the first compensation electrode CPEc may have a cross shape, and thesecond compensation electrode CPEd may have a meandering shape,serpentine shape, or a “Z” shape.

Each of the first compensation electrode CPEc and the secondcompensation electrode CPEd may be disposed in a dummy area where thered light emitting element PXR (refer to FIG. 9 ), the green lightemitting element PXG (refer to FIG. 9 ), and the blue light emittingelement PXB (refer to FIG. 9 ) are not disposed. For example, each ofthe first compensation electrode CPEc and the second compensationelectrode CPEd may be provided in an area overlapping the first pixelcircuit PC1 (refer to FIG. 5 ) that drives the first light emittingelement LD1 (refer to FIG. 5 ). In addition, each of the firstcompensation electrode CPEc and the second compensation electrode CPEdmay be provided in an area overlapping the pixel defining film PDL(refer to FIG. 6A) that is located between the red light emittingelement PXR (refer to FIG. 9 ), the green light emitting element PXG(refer to FIG. 9 ), and the blue light emitting element PXB (refer toFIG. 9 ).

Although FIG. 15 illustrates an example in which the first meshstructure MS1 d includes two types of first and second compensationelectrodes CPEc and CPEd, the present inventive concept is notparticularly limited thereto. For example, the first mesh structure MS1d may further include at least one of the compensation electrodes CPE,CPEa, and CPEb described above with reference to FIGS. 11, 12, and 14 .

FIG. 16 is an enlarged plan view illustrating area CC’ of FIG. 8 .

Referring to FIGS. 8 and 16 , a portion of the first sensing area S-A1and a portion of the second sensing area S-A2 are illustrated. A firstmesh structure MS1 e may be disposed in the first sensing area S-A1, anda second mesh structure MS2 may be disposed in the second sensing areaS-A2. The first mesh structure MS1 e may differ from the second meshstructure MS2. For example, the area of the first mesh structure MS1 edisposed in the same reference area may be greater than the area of thesecond mesh structure MS2.

For example, the first mesh structure MS1 e may include a plurality offirst mesh lines ML1 and CML1 and a plurality of first intersection meshlines MLC1 and CMLC1. The plurality of first mesh lines ML1 and CML1 andthe plurality of first intersection mesh lines MLC1 and CMLC1 mayinclude the same material and may be simultaneously formed in the sameprocess The minimum interval between the plurality of first mesh linesML1 and CML1 may be smaller than the interval between a plurality ofsecond mesh lines ML2. The minimum interval between the plurality offirst intersection mesh lines MLC1 and CMLC1 may be smaller than theinterval between a plurality of second intersection mesh lines MLC2.

Hereinafter, among the plurality of first mesh lines ML1 and CML1, thefirst mesh lines CML1 may be referred to as the first compensation meshlines CML1. Further, the first compensation mesh lines CML1 are notincluded in the second mesh structure MS2. Among the plurality of firstintersection mesh lines MLC1 and CMLC1, the first intersection meshlines CMLC1 may be referred to as the first compensation intersectionmesh lines CMLC1. Further, the first compensation intersection meshlines CMLC1 are not included in the second mesh structure MS2.

One first compensation mesh line CML1 may be disposed between two firstmesh lines ML1 most adjacent to each other, and one first compensationintersection mesh line CMLC1 may be disposed between two firstintersection mesh lines MLC1 most adjacent to each other.

The first compensation mesh lines CML1 and the first compensationintersection mesh lines CMLC1 may be connected with each other to havean integrated shape. Furthermore, the first compensation mesh lines CML1and the first compensation intersection mesh lines CMLC1 may beconnected with the first mesh lines ML1 and the first intersection meshlines MLC1 to have an integrated shape. For example, although the firstcompensation mesh lines CML1 and the first compensation intersectionmesh lines CMLC1 additionally disposed in the first sensing area S-A1are distinguished from the first mesh lines ML1 and the firstintersection mesh lines MCL1 by hatching, the first compensation meshlines CML1 and the first compensation intersection mesh lines CMLC1 mayinclude the same material as the first mesh lines ML1 and the firstintersection mesh lines MCL1, and the boundary might not bedistinguished.

The first compensation mesh lines CML1 and the first compensationintersection mesh lines CMLC1 may be disposed in a dummy area where thered light emitting element PXR (refer to FIG. 9 ), the green lightemitting element PXG (refer to FIG. 9 ), and the blue light emittingelement PXB (refer to FIG. 9 ) are not disposed. For example, the firstcompensation mesh lines CML1 and the first compensation intersectionmesh lines CMLC1 may be provided in an area overlapping the first pixelcircuit PC1 (refer to FIG. 5 ) that drives the first light emittingelement LD1 (refer to FIG. 5 ). In addition, the first compensation meshlines CML1 and the first compensation intersection mesh lines CMLC1 maybe provided in an area overlapping the pixel defining film PDL (refer toFIG. 6A) that is located between the red light emitting element PXR(refer to FIG. 9 ), the green light emitting element PXG (refer to FIG.9 ), and the blue light emitting element PXB (refer to FIG. 9 ).

FIG. 17 is an enlarged plan view illustrating area CC’ of FIG. 8 .

Referring to FIGS. 8 and 17 , a first mesh structure MS1 f may bedisposed in the first sensing area S-A1, and a second mesh structure MS2may be disposed in the second sensing area S-A2.

The area of the first mesh structure MS If disposed in the samereference area may be greater than the area of the second mesh structureMS2. For example, the first mesh structure MS1 f may include a pluralityof first mesh lines ML1, CML1 a, and CML1 b and a plurality of firstintersection mesh lines MLC1, CMLC1 a, and CMLC1 b. The plurality offirst mesh lines ML1, CML1 a, and CML1 b and the plurality of firstintersection mesh lines MLC1, CMLC1 a, and CMLC1 b may include the samematerial and may be simultaneously formed in the same process.

Hereinafter, among the plurality of first mesh lines ML1, CML1 a, andCML1 b, the first mesh lines CML1 a and CML1 b that the first meshstructure MS If additionally includes may be referred to as the firstcompensation mesh lines CML1 a and CML1 b. Further, the second meshstructure MS2 does not include the first compensation mesh lines CML1 aand CML1 b. Among the plurality of first intersection mesh lines MLC1,CMLC1 a, and CMLC1 b, the first intersection mesh lines CMLC1 a andCMLC1 b that the first mesh structure MS1 f additionally includes may bereferred to as the first compensation intersection mesh lines CMLC1 aand CMLC1 b. Further, the second mesh structure MS2 does not include thefirst compensation intersection mesh lines CMLC1 a and CMLC1 b.

Two first compensation mesh lines CML1 a and CML1 b may be disposedbetween two first mesh lines ML1 most adjacent to each other, and twofirst compensation intersection mesh lines CMLC1 a and CMLC1 b may bedisposed between two first intersection mesh lines MLC1 most adjacent toeach other. Accordingly, the minimum interval between the plurality offirst mesh lines ML1, CML1 a, and CML1 b may be smaller than theinterval between a plurality of second mesh lines ML2. The minimuminterval between the plurality of first intersection mesh lines MLC1,CMLCIa, and CMLC1 b may be smaller than the interval between a pluralityof second intersection mesh lines MLC2.

The first compensation mesh lines CML1 a and CML1 b and the firstcompensation intersection mesh lines CMLC1 a and CMLC1 b may be disposedin a dummy area where the red light emitting element PXR (refer to FIG.9 ), the green light emitting element PXG (refer to FIG. 9 ), and theblue light emitting element PXB (refer to FIG. 9 ) are not disposed. Forexample, the first compensation mesh lines CML1 a and CML1 b and thefirst compensation intersection mesh lines CMLC1 a and CMLC1 b may beprovided in an area overlapping the first pixel circuit PC1 (refer toFIG. 5 ) that drives the first light emitting element LD1 (refer to FIG.5 ). In addition, the first compensation mesh lines CML1 a and CML1 band the first compensation intersection mesh lines CMLC1 a and CMLC1 bmay be provided in an area overlapping the pixel defining film PDL(refer to FIG. 6A) that is located between the red light emittingelement PXR (refer to FIG. 9 ), the green light emitting element PXG(refer to FIG. 9 ), and the blue light emitting element PXB (refer toFIG. 9 )

FIG. 18 is an enlarged plan view illustrating area BB’ of FIG. 8 .

Referring to FIG. 18 , a first mesh structure MS1 g, which is disposedin the first sensing area S-A1, and a second mesh structure MS2, whichis disposed in the second sensing area S-A2, are illustrated.

The first mesh structure MS1 g may include a plurality of first meshlines ML1-1 and a plurality of first intersection mesh lines MLC1-1. Theplurality of first mesh lines ML1-1 and the plurality of firstintersection mesh lines MLC1-1 may intersect each other and may have anintegrated shape. The second mesh structure MS2 may include a pluralityof second mesh lines ML2 and a plurality of second intersection meshlines MLC2. The plurality of second mesh lines ML2 and the plurality ofsecond intersection mesh lines MLC2 may intersect each other and mayhave an integrated shape.

According to this embodiment, the width Tk 2-1 of each of the pluralityof first mesh lines ML1-1 and the plurality of first intersection meshlines MLC1-1 may be greater than the width Tk 1 of each of the pluralityof second mesh lines ML2 and the plurality of second intersection meshlines MLC2. The area of the first mesh structure MS1 g may be increasedby deforming the first mesh structure MSlg differently from the secondmesh structure MS2. Accordingly, the area of the portion of the sensor200 decreased by the transmissive area TPA may be supplemented by thefirst mesh structure MS1 g. Thus, the sensing sensitivity in an areathat overlaps the transmissive area TPA (refer to FIG. 7A) of the sensor200 (refer to FIG. 7A) or is adjacent to the transmissive area TPA(refer to FIG. 7A) may be increased.

FIG. 19A is an enlarged plan view illustrating area BB’ of FIG. 8 .

Referring to FIGS. 8 and 19A, the first sensing area S-A1 may include afirst sub-sensing area SSa and the second sub-sensing area SSb Thefirst-sensing area SSa may be adjacent to the transmissive area TPA, andthe second sub-sensing area SSb may be between the first sub-sensingarea SSa and the second sensing area S-A2.

A first — first mesh structure MS1 ga may be disposed in the firstsub-sensing area SSa. A first — second mesh structure MS1 gb may bedisposed in the second sub-sensing area SSb, and a second mesh structureMS2 may be disposed in the second sensing area S-A2. The first —firstmesh structure MS1 ga may be referred to as a first portion meshstructure MS1 ga, and the first — second mesh structure MS1 gb may bereferred to as a second portion mesh structure MS1 gb.

According to this embodiment, the width Tk 2 b of each of mesh linesincluded in the first — first mesh structure MS1 ga may be greater thanthe width Tk 2 a of each of mesh lines included in the first — secondmesh structure MS1 gb, and the width Tk 2 a of each of the mesh linesincluded in the first — second mesh structure MS1 gb may be greater thanthe width Tk 1 of each of mesh lines included in the second meshstructure MS2. Each of the widths Tk 1, Tk 2 a, and Tk 2 b may refer tothe width in the direction crossing the extension direction orlengthwise direction of the mesh lines and may refer to the width of amesh line disposed between two openings adjacent to each other

For example, mesh lines closer to the transmissive area TPA (refer toFIG. 7A) may have a larger width. Accordingly, the width of a meshstructure per unit area may be further increased toward the transmissivearea TPA (refer to FIG. 7A). Thus, the area of the portion decreased bythe transmissive area TPA may be supplemented by the first — first meshstructure MS1 ga and the first — second mesh structure MS1 gb. As aresult, the sensing sensitivity in an area that overlaps thetransmissive area TPA (refer to FIG. 7A) of the sensor 200 (refer toFIG. 7A) or is adjacent to the transmissive area TPA (refer to FIG. 7A)may be increased.

FIG. 19B is an enlarged plan view illustrating area BB’ of FIG. 8 .

Referring to FIGS. 8 and 19B, a portion of the first sensing area S-A1and a portion of the second sensing area S-A2 are illustrated.

A first — first mesh structure MS1 ha may be disposed in the firstsub-sensing area SSa. A first — second mesh structure MS1 hb may bedisposed in the second sub-sensing area SSb, and a second mesh structureMS2 may be disposed in the second sensing area S-A2. The first —firstmesh structure MS1 ha, the first — second mesh structure MS1 hb, and thesecond mesh structure MS2 may differ from one another. For example, theareas of the first — first mesh structure MS1 ha and the first — secondmesh structure MSlhb disposed in the same reference area may be greaterthan the area of the second mesh structure MS2. The first — first meshstructure MS1 ha may be referred to as a first portion mesh structureMS1 ha, and the first —second mesh structure MS1 hb may be referred toas a second portion mesh structure MS1 hb.

The mesh structure MS1 ha may include first mesh lines ML1, firstintersection mesh lines MLC1, and a compensation electrode CPEea. Thefirst mesh lines ML1, the first intersection mesh lines MLC1, and thecompensation electrode CPEea may include the same material and may besimultaneously formed in the same process. The first — second meshstructure MS1 hb may include first mesh lines ML1, first intersectionmesh lines MLC1, and a compensation electrode CPEeb. The first meshlines ML1, the first intersection mesh lines MLC1, and the compensationelectrode CPEeb may include the same material as each other and may besimultaneously formed in the same process as each other.

In the first sub-sensing area SSa, the compensation electrode CPEea maybe disposed in all dummy areas where the red light emitting element PXR,the green light emitting element PXG, and the blue light emittingelement PXB are not disposed. In the second sub-sensing area SSb, thecompensation electrode CPEeb may be disposed in a part of all dummyareas where the red light emitting element PXR, the green light emittingelement PXG, and the blue light emitting element PXB are not disposed.

Unlike what is illustrated in FIG. 19B, in an embodiment of the presentinventive concept, in the second sub-sensing area SSb, the compensationelectrode CPEeb may be disposed in all dummy areas where the red lightemitting element PXR, the green light emitting element PXG, and the bluelight emitting element PXB are not disposed, and in the firstsub-sensing area SSa, the compensation electrode CPEea may be disposedin a part of all dummy areas where the red light emitting element PXR,the green light emitting element PXG, and the blue light emittingelement PXB are not disposed.

Furthermore, without distinction of the first sub-sensing area SSa andthe second sub-sensing area SSb, the arrangement density of thecompensation electrodes may be increased or decreased toward the secondsensing area S-A2.

In addition, the shapes of the compensation electrodes CPEea and CPEebare not limited to the illustrated example, and the compensationelectrodes CPEea and CPEeb may have various shapes. For example, theshapes of the compensation electrodes CPEea and CPEeb may be replacedwith one of the shapes of the compensation electrodes illustrated inFIGS. 12, 13, 14, and 15 .

According to this embodiment, the area of the portion decreased by thetransmissive area TPA may be supplemented by the first — first meshstructure MS1 ha and the first — second mesh structure MS1 hb.Accordingly, the sensing sensitivity in an area that overlaps thetransmissive area TPA (refer to FIG. 7A) of the sensor 200 (refer toFIG. 7A) or is adjacent to the transmissive area TPA (refer to FIG. 7A)may be increased.

FIG. 20 is an enlarged plan view illustrating area BB’ of FIG. 8 .

Referring to FIGS. 8 and 20 , a first mesh structure MS1 i may include aplurality of first mesh lines ML1 t and a plurality of firstintersection mesh lines MLC1 t. The plurality of first mesh lines ML1 tand the plurality of first intersection mesh lines MLC1 t may intersecteach other and may have an integrated shape. A second mesh structure MS2may include a plurality of second mesh lines ML2 and a plurality ofsecond intersection mesh lines MLC2. The plurality of second mesh linesML2 and the plurality of second intersection mesh lines MLC2 mayintersect each other and may have an integrated shape.

A mesh structure is not disposed in the transmissive area TPA. Forexample, the arrangement density of a mesh structure disposed in thetransmissive area TPA may be “0”. The arrangement density of the firstmesh structure MS1 i that is disposed in the first sensing area S-A1 mayhave a density between the arrangement density of the second meshstructure MS2, which is disposed in the second sensing area S-A2, andthe arrangement density of a mesh structure in the transmissive areaTPA.

The arrangement density of the plurality of first mesh lines ML1 t maybe lower than the arrangement density of the plurality of second meshlines ML2, and the arrangement density of the plurality of firstintersection mesh lines MLC1 t may be lower than the arrangement densityof the plurality of second intersection mesh lines MLC2. The size of anopening formed in the first mesh structure MS1 i may be larger than thesize of an opening formed in the second mesh structure MS2.

The distance DT1 a between two first mesh lines ML1 t adjacent to eachother among the plurality of first mesh lines ML1 t may be greater thanthe distance DT1 b between two second mesh lines ML2 adjacent to eachother among the plurality of second mesh lines ML2. Furthermore, thedistance DT2 a between two first intersection mesh lines MLC1 t adjacentto each other among the plurality of first intersection mesh lines MLC1t may be greater than the distance DT2 b between two second intersectionmesh lines MLC2 adjacent to each other among the plurality of secondintersection mesh lines MLC2.

The visibility of the transmissive area TPA where a mesh structure isnot disposed may be alleviated by making the arrangement density of thefirst mesh structure MS1 i lower than that of the second mesh structureMS2. Furthermore, in this embodiment, the sensing sensitivity may beincreased by making the width Tk 2-1 of each of the plurality of firstmesh lines ML1 t and each of the plurality of first intersection meshlines MLC1 t greater than the width Tk 1 of each of the plurality ofsecond mesh lines ML2 and each of the plurality of second intersectionmesh lines MLC2.

FIG. 21 is an enlarged plan view illustrating area BB’ of FIG. 8 .

Referring to FIG. 21 , a first — first mesh structure MS1 ia may bedisposed in the first sub-sensing area SSa. A first — second meshstructure MS1 ib may be disposed in the second sub-sensing area SSb, anda second mesh structure MS2 may be disposed in the second sensing areaS-A2. The first — first mesh structure MSlia may be referred to as afirst portion mesh structure MS1 ia, and the first — second meshstructure MS1 ib may be referred to as a second portion mesh structureMS1 ib.

The visibility of the transmissive area TPA where a mesh structure isnot disposed may be alleviated by making the arrangement density of thefirst — first mesh structure MS1 ia and the first — second meshstructure MS1 ib lower than that of the second mesh structure MS2.Furthermore, in this embodiment, the width Tk 2-3 b of each of meshlines included in the first —first mesh structure MS1 ia may be greaterthan the width Tk 2-3 a of each of mesh lines included in the first —second mesh structure MS1 ib, and the width tk 2-3 a of each of the meshlines included in the first — second mesh structure MS1 ib may begreater than the width Tk 1 of each of mesh lines included in the secondmesh structure MS2. Accordingly, the sensor 200 (refer to FIG. 7A)having increased external visibility and sensing sensitivity may beprovided.

Although FIG. 21 illustrates an example in which the first sensing areaS-A1 is divided into the two sub-sensing areas SSa and SSb, the presentinventive concept is not limited thereto. For example, the first sensingarea S-A1 may be divided into three or more sub-sensing areas. In thiscase, the widths of mesh lines disposed in the sub-sensing areas maydiffer from one another.

FIG. 22 is an enlarged plan view illustrating area BB’ of FIG. 8 .

Referring to FIG. 22 , the arrangement density of a first — first meshstructure MSib-1 disposed in the first sub-sensing area SSa may be lowerthan the arrangement density of a first — second mesh structure MSib-2disposed in the second sub-sensing area SSb. The arrangement density ofthe first — second mesh structure MSib-2 disposed in the secondsub-sensing area SSb may have a density between the arrangement densityof the first — first mesh structure MSib-1, which is disposed in thefirst sub-sensing area SSa, and the arrangement density of a second meshstructure MS2, which is disposed in the second sensing area S-A2.

The first — first mesh structure MSib-1 may include a plurality of meshlines 1-1 MLlta and a plurality of intersection mesh lines 1-1 MLC1 ta.The first — second mesh structure MSib-2 may include a plurality of meshlines 1-2 ML1 tb and a plurality of intersection mesh lines 1-2 MLC1 tb.

The distance DT1 a between two mesh lines 1-1 ML1 ta adjacent to eachother among the plurality of mesh lines 1-1 ML1 ta may be smaller thanthe distance DT1 c between two mesh lines 1-2 ML1 tb adjacent to eachother among the plurality of mesh lines 1-2 ML1 tb. For example, thedifference between the distance DT1 a and the distance DT1 c maycorrespond to the difference between the width of the mesh line 1-1 ML1ta and the width of the mesh line 1-2 ML1 tb. The distance DT2 a betweentwo intersection mesh lines 1-1 MLC1 ta adjacent to each other among theplurality of intersection mesh lines 1-1 MLClta may be greater than thedistance DT2 c between two intersection mesh lines 1-2 MLCltb adjacentto each other among the plurality of intersection mesh lines 1-2 MLC1tb. The distance DT2 c between two intersection mesh lines 1-2 MLC1 tbmay be the same as the distance DT2 b between two second intersectionmesh lines MLC2.

The arrangement density of the first — second mesh structure MSib-2 maybe lower than the arrangement density of the second mesh structure MS2,and the arrangement density of the first — first mesh structure MSib-1may be lower than the arrangement density of the first — second meshstructure MSib-2. The arrangement densities of the first — first meshstructure MSib-1, the first — second mesh structure MSib-2, and thesecond mesh structure MS2 are not limited to the above-described rule.

FIG. 23 is a plan view of a sensor according to an embodiment of thepresent inventive concept.

Referring to FIG. 23 , the sensor 200 a may include a plurality of firstelectrodes 201 and a plurality of second electrodes 202. Each of theplurality of first electrodes 201 may include first portions 211 andsecond portions 212. Each of the plurality of second electrodes 202 mayinclude sensing patterns 221 and bridge patterns 222. Each of theplurality of first electrodes 201 and the sensing patterns 221 may havea mesh (or, e.g., lattice or net) structure.

A transmissive area TPA, a first sensing area S-A1 a, and a secondsensing area S-A2 a may be formed in the sensor 200 a. The first sensingarea S-A1 a may overlap the second area DP-A2 (refer to FIG. 4 ) of thedisplay panel 100 (refer to FIG. 4 ), and the second sensing area S-A2 amay overlap the third area DP-A3 (refer to FIG. 4 ) of the display panel100 (refer to FIG. 4 ).

FIG. 24 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 23 .

Referring to FIGS. 23 and 24 , two first portions 211 x 1 and 211 x 2,which may be adjacent to the transmissive area TPA, two sensing patterns221 x 1 and 221 x 2, a compensation portion 211 c, which may beconnected to the two first portions 211 x 1 and 211 x 2, a compensationpattern 221 y, which may be electrically connected to the two sensingpatterns 221 x 1 and 221 x 2, first bridge patterns 222 x 1, which mayelectrically connect the compensation pattern 221 y and the sensingpattern 221 x 1 to each other, and second bridge patterns 222 x 2, whichmay electrically connect the compensation pattern 221 y and the sensingpattern 221 x 2 to each other, are illustrated.

The compensation portion 211 c and the compensation pattern 221 y may bedisposed in the first sensing area S-A1 a. The first portions 211 x 1and 211 x 2 and the sensing patterns 221 x 1 and 221 x 2 may be disposedin the second sensing area S-A2 a. Accordingly, each of the compensationportion 211 c and the compensation pattern 221 y may have a first meshstructure, and each of the first portions 211 x 1 and 211 x 2 and thesensing patterns 221 x 1 and 221 x 2 may have a second mesh structure.

The border BRx between the first sensing area S-A1 a and the secondsensing area S-A2 a may have a rectangular shape. One of the first meshstructure and the second mesh structure facing each other at the borderBRx between the first sensing area S-A1 a and the second sensing areaS-A2 a may be included in the first electrode 201, and the other may beincluded in the second electrode 202. Accordingly, even though the firstelectrode 201 or the second electrode 202 is not provided at the portionoverlapping the transmissive area TPA, the portion where the firstelectrode 201 and the second electrode 202 face each other in an areaadjacent to the transmissive area TPA may be increased. Thus,deterioration in sensing sensitivity by the transmissive area TPA may beprevented.

A first mesh structure and a second mesh structure, which face eachother in the first direction DR1, may be included in differentelectrodes. For example, the first mesh structure may be included in oneof the second electrodes 202, and the second mesh structure may beincluded in one of the first electrodes 201. Furthermore, a first meshstructure and a second mesh structure, which face each other in thesecond direction DR2 may be included in different electrodes. Forexample, the first mesh structure may be included in one of the firstelectrodes 201, and the second mesh structure may be included in one ofthe second electrodes 202.

The first mesh structure and the second mesh structure may differ fromeach other. For example, the areas occupied by the first mesh structureand the second mesh structure in the same reference area may differ fromeach other. Hereinafter, the first mesh structure and the second meshstructure will be described in detail.

FIG. 25 is an enlarged plan view illustrating area DD’ of FIG. 23 .

Referring to FIGS. 23, 24, and 25 , a first mesh structure MS1 j and asecond mesh structure MS2, which face each other with respect to theborder BRx, are illustrated. The first mesh structure MS1 j may beincluded in the compensation pattern 221 y, for example, the secondelectrode 202, and the second mesh structure MS2 may be included in thefirst portion 211 x 2, for example, the first electrode 201.

The first mesh structure MS1 j may include a plurality of first meshlines ML1 and a plurality of first intersection mesh lines MLC1. Theplurality of first mesh lines ML1 and the plurality of firstintersection mesh lines MLC1 may intersect each other and may have anintegrated shape. The second mesh structure MS2 may include a pluralityof second mesh lines ML2 and a plurality of second intersection meshlines MLC2. The plurality of second mesh lines ML2 and the plurality ofsecond intersection mesh lines MLC2 may intersect each other and mayhave an integrated shape.

FIG. 26A is an enlarged plan view illustrating area DD’ of FIG. 23 .

Referring to FIGS. 23, 24, and 26 a , a first mesh structure MS1 k and asecond mesh structure MS2, which face each other with respect to theborder BRx, are illustrated The first mesh structure MS1 k may include aplurality of first mesh lines ML1 x and a plurality of firstintersection mesh lines MLC1 x. The plurality of first mesh lines ML1 xand the plurality of first intersection mesh lines MLC1 x may intersecteach other and may have an integrated shape. The second mesh structureMS2 may include a plurality of second mesh lines ML2 and a plurality ofsecond intersection mesh lines MLC2. The plurality of second mesh linesML2 and the plurality of second intersection mesh lines MLC2 mayintersect each other and may have an integrated shape.

A mesh structure is not disposed in the transmissive area TPA. Forexample, the arrangement density of a mesh structure disposed in thetransmissive area TPA may be “0”. The arrangement density of the firstmesh structure MS1 k disposed in the first sensing area S-A1 a may havea density between the arrangement density of the second mesh structureMS2, which is disposed in the second sensing area S-A2 a, and thearrangement density of a mesh structure in the transmissive area TPA.

The arrangement density of the plurality of first mesh lines ML1 x maybe lower than the arrangement density of the plurality of second meshlines ML2, and the arrangement density of the plurality of firstintersection mesh lines MLC1 x may be lower than the arrangement densityof the plurality of second intersection mesh lines MLC2. The size of anopening formed in the first mesh structure MS1 k may be larger than thesize of an opening formed in the second mesh structure MS2.

The distance DT1 a between two first mesh lines ML1 x adjacent to eachother, among the plurality of first mesh lines ML1 x, may be greaterthan the distance DT1 b between two second mesh lines ML2 adjacent toeach other, among the plurality of second mesh lines ML2. Furthermore,the distance DT2 a between two first intersection mesh lines MLC1 xadjacent to each other, among the plurality of first intersection meshlines MLC1 x, may be greater than the distance DT2 b between two secondintersection mesh lines MLC2 adjacent to each other, among the pluralityof second intersection mesh lines MLC2.

The visibility of the transmissive area TPA where a mesh structure isnot disposed may be alleviated by making the arrangement density of thefirst mesh structure MS1 k lower than that of the second mesh structureMS2. Furthermore, in this embodiment, because different electrodes aredisposed to face each other with respect to the border BRx to compensatefor the sensing sensitivity, the sensing sensitivity might not belowered even through the arrangement density of the first mesh structureMS1 k is relatively low.

FIG. 26B is an enlarged plan view illustrating area DD’ of FIG. 23 . Indescribing FIGS. 23, 24, and 26 a , components identical to thecomponents illustrated in FIG. 26A will be assigned with identicalreference numerals, and descriptions thereabout may be omitted toprevent redundant descriptions.

Referring to FIG. 26B, a first mesh structure MS1 l may include aplurality of first mesh lines ML1 t and a plurality of firstintersection mesh lines MLC1 t. The plurality of first mesh lines ML1 tand the plurality of first intersection mesh lines MLC1 t may intersecteach other and may have an integrated shape. A second mesh structure MS2may include a plurality of second mesh lines ML2 and a plurality ofsecond intersection mesh lines MLC2. The plurality of second mesh linesML2 and the plurality of second intersection mesh lines MLC2 mayintersect each other and may have an integrated shape.

The visibility of the transmissive area TPA (refer to FIG. 23 ) where amesh structure is not disposed may be alleviated by making thearrangement density of the first mesh structure MS11 lower than that ofthe second mesh structure MS2. Furthermore, in this embodiment, thesensing sensitivity may be increased by making the width Tk 2-4 of eachof the plurality of first mesh lines ML1 t and the plurality of firstintersection mesh lines MLC1 t greater than the width Tk 1 of each ofthe plurality of second mesh lines ML2 and the plurality of secondintersection mesh lines MLC2.

FIG. 27 is an enlarged plan view illustrating area DD’ of FIG. 23 . Indescribing FIG. 27 , components identical to the components illustratedin FIG. 26A will be assigned with identical reference numerals, anddescriptions thereabout may be omitted to prevent redundantdescriptions.

Referring to FIGS. 23, 24, and 27 , the first sensing area S-A1 a mayinclude a first sub-sensing area SSa and a second sub-sensing area SSb.The first sub-sensing area SSa may be adjacent to the transmissive areaTPA, and the second sub-sensing area SSb may be between the firstsub-sensing area SSa and the second sensing area S-A2 a.

The arrangement density of a first mesh structure MS1 ma disposed in thefirst sub-sensing area SSa may be lower than the arrangement density ofa first mesh structure MS1 mb disposed in the second sub-sensing areaSSb. The arrangement density of the first mesh structure MS1 mb disposedin the second sub-sensing area SSb may have a density between thearrangement density of the first mesh structure MS1 ma, which isdisposed in the first sub-sensing area SSa, and the arrangement densityof a second mesh structure MS2, which is disposed in the second sensingarea S-A2 a.

The first mesh structure MS1 ma may include a plurality of first meshlines ML1 x and a plurality of first intersection mesh lines MLC1 x. Thefirst mesh structure MS1 mb may include a plurality of first mesh linesML1 y and a plurality of first intersection mesh lines MLC1 y.

The distance DT1 a between two first mesh lines ML1 x adjacent to eachother, among the plurality of first mesh lines ML1 x, may besubstantially the same as the distance DT1 c between two first meshlines ML1 y adjacent to each other, among the plurality of first meshlines ML1 y. The distance DT2 a between two first intersection meshlines MLC1 x adjacent to each other, among the plurality of firstintersection mesh lines MLC1 x, may be greater than the distance DT2 cbetween two first intersection mesh lines MLC1 y adjacent to each other,among the plurality of first intersection mesh lines MLC1 y The distanceDT2 c between two first intersection mesh lines MLC1 y may besubstantially the same as the distance DT2 b between two secondintersection mesh lines MLC2.

The arrangement density of the first mesh structure MS1 mb may be lowerthan the arrangement density of the second mesh structure MS2, and thearrangement density of the first mesh structure MS1 ma may be lower thanthe arrangement density of the first mesh structure MS1 mb. Thearrangement densities of the first mesh structures MS1 ma and MS1 mb andthe second mesh structure MS2 are not limited to the above-describedrule.

Furthermore, although FIG. 27 illustrates an example in which the firstwidth Tk 2 x of each of the plurality of first mesh lines ML1 x and eachof the plurality of first intersection mesh lines MLC1 x, the secondwidth Tk 2 y of each of the plurality of first mesh lines ML1 y and eachof the plurality of first intersection mesh lines MLC1 y, and the thirdwidth Tk 1 of each of the second mesh lines ML2 and each of the secondintersection mesh lines MLC2 are substantially the same as one another,the present inventive concept is not limited thereto. For example, thefirst width Tk 2 x may be greater than the second width Tk 2 y, and thesecond width Tk 2 y may be greater than the third width Tk 1. Inaddition, the first width Tk 2 x may be substantially the same as thesecond width Tk 2 y, and the first width Tk 2 x and the second width Tk2 y may be greater than the third width Tk 1. In another case, thesecond width Tk 2 y may be greater than the first width Tk 2 x, and thefirst width Tk 2 x may be greater than the third width Tk 1.

FIG. 28 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 23 . In describing FIG. 28 , componentsidentical to the components illustrated in FIG. 24 will be assigned withidentical reference numerals, and descriptions thereabout may be omittedto prevent redundant descriptions.

Referring to FIG. 28 , two first portions 211 x 1 and 211 x 2, which areadjacent to the transmissive area TPA, two sensing patterns 221 x 1 and221 x 2, a compensation portion 211 c, which is connected to the twofirst portions 211 x 1 and 211 x 2, a compensation pattern 221 y, whichis electrically connected to the two sensing patterns 221 x 1 and 221 x2, first bridge patterns 222 x 1, which electrically connects thecompensation pattern 221 y and the sensing pattern 221 x 1 to eachother, and second bridge patterns 222 x 2, which electrically connectsthe compensation pattern 221 y and the sensing pattern 221 x 2 to eachother, are illustrated.

The border BRy between the first sensing area S-A1 a and the secondsensing area S-A2 a may have a square shape. Although FIG. 28illustrates an example that the border BRy has a square shape, thepresent inventive concept is not particularly limited thereto. Forexample, the border BRy may have a polygonal or a circular shape.

The compensation portion 211 c and the compensation pattern 221 y may bedisposed in the first sensing area S-A1 a. The first portions 211 x 1and 211 x 2 and the sensing patterns 221 x 1 and 221 x 2 may be disposedin the second sensing area S-A2 a. Accordingly, each of the compensationportion 211 c and the compensation pattern 221 y may have a first meshstructure, and each of the first portions 211 x 1 and 211 x 2 and thesensing patterns 221 x 1 and 221 x 2 may have a second mesh structure.

FIG. 29 is an enlarged plan view illustrating some components of thesensor illustrated in FIG. 23 . In describing FIG. 29 , componentsidentical to the components illustrated in FIG. 24 will be assigned withidentical reference numerals, and descriptions thereabout may be omittedto prevent redundant descriptions.

Referring to FIG. 29 , two first portions 11 x 1 and 211 x 2, which areadjacent to the transmissive area TPA, two sensing patterns 221 x 1 and221 x 2, a compensation portion 211 c, which is connected to the twofirst portions 211 x 1 and 211 x 2, a compensation pattern 221 y, whichis electrically connected to the two sensing patterns 221 x 1 and 221 x2, first bridge patterns 222 x 1, which electrically connect thecompensation pattern 221 y and the sensing pattern 221 x 1 to eachother, and second bridge patterns 222 x 2, which electrically connectthe compensation pattern 221 y and the sensing pattern 221 x 2 to eachother, are illustrated.

The border BRz between the first sensing area S-A1 a and the secondsensing area S-A2 a may have a circular shape, but the present inventiveconcept is not particularly limited thereto. For example, the border BRzmay have an oval shape or a shape including a curved line and a straightline. The compensation portion 211 c and the compensation pattern 221 ymay be disposed in the first sensing area S-A1 a. The first portions 211x 1 and 211 x 2 and the sensing patterns 221 x 1 and 221 x 2 may bedisposed in the second sensing area S-A2 a. Accordingly, each of thecompensation portion 211 c and each of the compensation pattern 221 ymay have a first mesh structure, and each of the first portions 211 x 1and 211 x 2 and each of the sensing patterns 221 x 1 and 221 x 2 mayhave a second mesh structure.

As described above, the first electrode and the second electrode of thesensor might not be disposed in the transmissive area. The sensor mayinclude the first sensing area, which is adjacent to the transmissivearea, and the second sensing area, which is adjacent to the firstsensing area. The first mesh structure of the first electrode or thesecond electrode disposed in the first sensing area may differ from thesecond mesh structure of the first electrode or the second electrodedisposed in the second sensing area. Accordingly, the sensingsensitivity of the sensor may be increased by difference between thefirst mesh structure and the second mesh structure. In addition, aprobability that the sensor will be visible from the outside may bedecreased by the first mesh structure and the second mesh structure thatdiffer from each other. In another case, an increase in the sensingsensitivity of the sensor and a decrease in a probability that thesensor will be visible from the outside may be achieved by the firstmesh structure and the second mesh structure that differ from eachother.

While the present inventive concept has been described with reference toembodiments thereof, it will be understood by those of ordinary skill inthe art that various changes in form and details may be made theretowithout departing from the spirit and scope of the present inventiveconcept.

What is claimed is:
 1. A display module comprising: a display panelhaving a first area, a second area, and a third area, wherein the secondarea is adjacent to the first area, and the third area surrounds atleast part of the second area; and a sensor disposed on the displaypanel, wherein the sensor has a transmissive area, a first sensing area,and a second sensing area, wherein the transmissive area overlaps thefirst area, wherein the first sensing area overlaps the second area, andthe second sensing area overlaps the third area, wherein the sensorincludes a plurality of first electrodes and a plurality of secondelectrodes, and each of the plurality of first electrodes and theplurality of second electrodes has a mesh structure, and wherein themesh structure includes a first mesh structure and a second meshstructure, wherein the first mesh structure is configured to overlap thefirst sensing area, wherein the second mesh structure configured tooverlap the second sensing area, and wherein the first mesh structureand the second mesh structure are different from each other.
 2. Thedisplay module of claim 1, wherein the first mesh structure includes aplurality of first mesh lines and a plurality of first intersection meshlines configured to intersect the plurality of first mesh lines, and thesecond mesh structure includes a plurality of second mesh lines and aplurality of second intersection mesh lines configured to intersect theplurality of second mesh lines.
 3. The display module of claim 2,wherein the first mesh structure includes a plurality of firstdisconnection portions formed in the plurality of first mesh lines andthe plurality of first intersection mesh lines, and the second meshstructure includes a plurality of second disconnection portions formedin the plurality of second mesh lines and the plurality of secondintersection mesh lines, and wherein an arrangement density of theplurality of first disconnection portions is lower than an arrangementdensity of the plurality of second disconnection portions.
 4. Thedisplay module of claim 3, wherein the first sensing area includes afirst sub-sensing area adjacent to the transmissive area and a secondsub-sensing area between the first sub-sensing area and the secondsensing area, and wherein an arrangement density of first disconnectionportions configured to overlap the first sub-sensing area among theplurality of first disconnection portions is lower than an arrangementdensity of first disconnection portions configured to overlap the secondsub-sensing area among the plurality of first disconnection portions. 5.The display module of claim 2, wherein the first mesh structure furtherincludes a compensation electrode, and the compensation electrode isdisposed in an area corresponding to an opening formed by some firstmesh lines among the plurality of first mesh lines and some firstintersection mesh lines among the plurality of first intersection meshlines.
 6. The display module of claim 5, wherein the compensationelectrode has a shape corresponding to the opening and is connected tothe some first mesh lines and the some first intersection mesh lines. 7.The display module of claim 5, wherein the compensation electrodeoverlaps a portion of the opening and is connected to at least a part ofthe some first mesh lines and the some first intersection mesh lines. 8.The display module of claim 2, wherein the first mesh structure includesa first compensation mesh line disposed between some first mesh linesamong the plurality of first mesh lines.
 9. The display module of claim8, wherein the first mesh structure further includes a firstcompensation intersection mesh line disposed between some firstintersection mesh lines among the plurality of first intersection meshlines.
 10. The display module of claim 2, wherein a width of a firstportion of a first mesh line among the plurality of first mesh lines isgreater than a width of a second portion of the first mesh line, and awidth of first portion of a first intersection mesh line among theplurality of first intersection mesh lines is greater than a width ofsecond portion of the first intersection mesh line.
 11. The displaymodule of claim 2, wherein the first mesh structure and the second meshstructure face each other and are included in one of the plurality offirst electrodes or one of the plurality of second electrodes.
 12. Thedisplay module of claim 2, wherein the first mesh structure and thesecond mesh structure face each other, the first mesh structure isincluded in one of the plurality of first electrodes, and the secondmesh structure is included in one of the plurality of second electrodes.13. The display module of claim 12, wherein a distance between theplurality of first mesh lines is greater than a distance between theplurality of second mesh lines.
 14. The display module of claim 12,wherein in the second sensing area, an arrangement density of theplurality of first mesh lines and an arrangement density of theplurality of first intersection mesh lines are gradually lowered as thetransmissive area is approached.
 15. The display module of claim 1,wherein a border between the first sensing area and the second sensingarea has a circular shape.
 16. The display module of claim 1, wherein aborder between the first sensing area and the second sensing area has apolygonal shape.
 17. The display module of claim 1, wherein the displaypanel includes: a first pixel including a first light emitting elementand a first pixel circuit, wherein the first light emitting element isdisposed in the first area, and the first pixel circuit is configured todrive the first light emitting element and is disposed in the secondarea; a second pixel including a second light emitting element and asecond pixel circuit, wherein the second light emitting element isdisposed in the second area, and the second pixel circuit is configuredto drive the second light emitting element and is disposed in the secondarea; and a third pixel including a third light emitting element and athird pixel circuit, wherein the third light emitting element isdisposed in the third area, and the third pixel circuit is configured todrive the third light emitting element and is disposed in the thirdarea.
 18. The display module of claim 17, wherein the first lightemitting element includes a plurality of first light emitting elements,wherein the third light emitting element includes a plurality of thirdlight emitting elements, and wherein a distance between two first lightemitting elements most adjacent to each other among the plurality offirst light emitting elements is greater than a distance between twothird light emitting elements most adjacent to each other among theplurality of third light emitting elements.
 19. An electronic devicecomprising: a display panel; a sensor disposed on the display panel,wherein the sensor has a transmissive area, a first sensing area, and asecond sensing area, wherein the first sensing area is adjacent to thetransmissive area, and the second sensing area is spaced apart from thetransmissive area with the first sensing area disposed therebetween; andan electronic module disposed on the display panel and configured tooverlap the transmissive area, wherein the sensor includes: a first meshstructure disposed in the first sensing area, wherein the first meshstructure includes a plurality of first mesh lines and a plurality offirst intersection mesh lines configured to intersect the plurality offirst mesh lines; and a second mesh structure disposed in the secondsensing area, wherein the second mesh structure includes a plurality ofsecond mesh lines and a plurality of second intersection mesh linesconfigured to intersect the plurality of second mesh lines, and whereinan area of the first mesh structure is different from an area of thesecond mesh structure.
 20. The electronic device of claim 19, whereinthe first mesh structure includes a plurality of first disconnectionportions formed in the plurality of first mesh lines and the pluralityof first intersection mesh lines, and the second mesh structure includesa plurality of second disconnection portions formed in the plurality ofsecond mesh lines and the plurality of second intersection mesh lines,and wherein an arrangement density of the plurality of firstdisconnection portions is lower than an arrangement density of theplurality of second disconnection portions.